Computer simulations of the early-stage growth of Ge clusters at elevated temperatures on patterned Si substrate using the kinetic Monte Carlo method

Résultats de recherche: Contribution à un journal/une revueArticle

Résumé

In this work we investigate the formation of Ge clusters on stepped Si substrate at elevated temperatures (≤ 300 C) with the help of the kinetic Monte-Carlo (kMC) method. The modeling was performed for the case of low surface coverage in order to examine the process of Ge cluster growth at early stages. The temperature dependence of the development of Ge structures was explored and the transition from the growth in the middle of the steps to the growth at step edges was traced. Modeling shows that the formation of Ge clusters at the step edges begins at temperatures higher than 60 C, whereas at temperatures below 60 C clusters grow at the middle of the steps, and at 300 C all Ge atoms are gathered at the bottom of the Si step edges. Results of the kMC simulations were compared to experiments and analytical evaluations. A cluster formation diagram linking deposition rate, terrace width, and transition temperature between different cluster formation modes is presented.
langue originaleAnglais
Pages (de - à)313-317
Nombre de pages5
journalThin Solid Films
Volume536
Les DOIs
Etat de la publicationPublié - 1 juin 2013

Empreinte digitale Examiner les sujets de recherche de « Computer simulations of the early-stage growth of Ge clusters at elevated temperatures on patterned Si substrate using the kinetic Monte Carlo method ». Ensemble, ils forment une empreinte digitale unique.

  • Équipement

  • Activités

    • 1 Participation à une conférence, un congrès

    14th International Conference on Plasma Surface Engineering (PSE)

    Stéphane Lucas (Conférencier invité)

    15 sept. 201419 sept. 2014

    Activité: Types de Participation ou d'organisation d'un événementParticipation à une conférence, un congrès

    Contient cette citation