Charge trapping phenomena in single electron NVM SOI devices fabricated by a self-aligned quantum dot technology

A. Nazarov, V. Lysenko, X. Tang, N. Reckinger, V. Bayot

    Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceChapitre

    Résumé

    Charge trapping in self-aligned single-dot memory devices fabricated by UCL technology based on arsenic-assisted etching and oxidation effects is investigated. The devices demonstrate room-temperature single-electron trapping in the Si nanodot floating gate circa 16 nm in size. The pulse transfer (Id-Vg) characteristics and time evolution of the drain current (Id - t) technique are employed for determination of the total charge storage in the Si nanodot floating gate and the gate-nanodot capacitance of the devices.
    langue originaleAnglais
    titreNATO Security through Science Series B: Physics and Biophysics
    Pages251-256
    Nombre de pages6
    Etat de la publicationPublié - 1 janv. 2006

    Empreinte digitale

    Examiner les sujets de recherche de « Charge trapping phenomena in single electron NVM SOI devices fabricated by a self-aligned quantum dot technology ». Ensemble, ils forment une empreinte digitale unique.

    Contient cette citation