Characterization of ytterbium silicide formed in ultra high vacuum

A. Laszcz; J. Ratajczak; A. Czerwinski; J. Katcki; V. Srot; F. Phillipp; P.A. Van Aken; D.A. Yarekha; Nicolas Reckinger; G. Larrieu; E. Dubois

Characterization of ytterbium silicide formed in ultra high vacuum

A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, V. Srot, F. Phillipp, P.A. Van Aken, D.A. Yarekha, Nicolas Reckinger, G. Larrieu, E. Dubois

Résultats de recherche: Contribution à un événement scientifique (non publié) › Résumé › Revue par des pairs

langue originale	Anglais
Etat de la publication	Publié - 2009
Evénement	16th Conference on Microscopy of Semiconducting Material - Oxford, Royaume-Uni Durée: 17 mars 2009 → 20 mars 2009

Une conférence

Une conférence	16th Conference on Microscopy of Semiconducting Material
Pays/Territoire	Royaume-Uni
La ville	Oxford
période	17/03/09 → 20/03/09

Contient cette citation

@conference{4b78cfe2299b4789b1b22b9cd99e3e29,

title = "Characterization of ytterbium silicide formed in ultra high vacuum",

author = "A. Laszcz and J. Ratajczak and A. Czerwinski and J. Katcki and V. Srot and F. Phillipp and {Van Aken}, P.A. and D.A. Yarekha and Nicolas Reckinger and G. Larrieu and E. Dubois",

year = "2009",

language = "English",

note = "16th Conference on Microscopy of Semiconducting Material ; Conference date: 17-03-2009 Through 20-03-2009",

}

TY - CONF

T1 - Characterization of ytterbium silicide formed in ultra high vacuum

AU - Laszcz, A.

AU - Ratajczak, J.

AU - Czerwinski, A.

AU - Katcki, J.

AU - Srot, V.

AU - Phillipp, F.

AU - Van Aken, P.A.

AU - Yarekha, D.A.

AU - Reckinger, Nicolas

AU - Larrieu, G.

AU - Dubois, E.

PY - 2009

Y1 - 2009

M3 - Abstract

T2 - 16th Conference on Microscopy of Semiconducting Material

Y2 - 17 March 2009 through 20 March 2009

ER -