Characterization of ytterbium silicide formed in ultra high vacuum

A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, V. Srot, F. Phillipp, P.A. Van Aken, D.A. Yarekha, Nicolas Reckinger, G. Larrieu, E. Dubois

Résultats de recherche: Contribution à un événement scientifique (non publié)Résumé

langue originaleAnglais
étatPublié - 2009
Evénement16th Conference on Microscopy of Semiconducting Material - Oxford, Royaume-Uni
Durée: 17 mars 200920 mars 2009

Une conférence

Une conférence16th Conference on Microscopy of Semiconducting Material
PaysRoyaume-Uni
La villeOxford
période17/03/0920/03/09

Citer ceci

Laszcz, A., Ratajczak, J., Czerwinski, A., Katcki, J., Srot, V., Phillipp, F., ... Dubois, E. (2009). Characterization of ytterbium silicide formed in ultra high vacuum. Résumé de 16th Conference on Microscopy of Semiconducting Material, Oxford, Royaume-Uni.
Laszcz, A. ; Ratajczak, J. ; Czerwinski, A. ; Katcki, J. ; Srot, V. ; Phillipp, F. ; Van Aken, P.A. ; Yarekha, D.A. ; Reckinger, Nicolas ; Larrieu, G. ; Dubois, E. / Characterization of ytterbium silicide formed in ultra high vacuum. Résumé de 16th Conference on Microscopy of Semiconducting Material, Oxford, Royaume-Uni.
@conference{4b78cfe2299b4789b1b22b9cd99e3e29,
title = "Characterization of ytterbium silicide formed in ultra high vacuum",
author = "A. Laszcz and J. Ratajczak and A. Czerwinski and J. Katcki and V. Srot and F. Phillipp and {Van Aken}, P.A. and D.A. Yarekha and Nicolas Reckinger and G. Larrieu and E. Dubois",
year = "2009",
language = "English",
note = "16th Conference on Microscopy of Semiconducting Material ; Conference date: 17-03-2009 Through 20-03-2009",

}

Laszcz, A, Ratajczak, J, Czerwinski, A, Katcki, J, Srot, V, Phillipp, F, Van Aken, PA, Yarekha, DA, Reckinger, N, Larrieu, G & Dubois, E 2009, 'Characterization of ytterbium silicide formed in ultra high vacuum', 16th Conference on Microscopy of Semiconducting Material, Oxford, Royaume-Uni, 17/03/09 - 20/03/09.

Characterization of ytterbium silicide formed in ultra high vacuum. / Laszcz, A.; Ratajczak, J.; Czerwinski, A.; Katcki, J.; Srot, V.; Phillipp, F.; Van Aken, P.A.; Yarekha, D.A.; Reckinger, Nicolas; Larrieu, G.; Dubois, E.

2009. Résumé de 16th Conference on Microscopy of Semiconducting Material, Oxford, Royaume-Uni.

Résultats de recherche: Contribution à un événement scientifique (non publié)Résumé

TY - CONF

T1 - Characterization of ytterbium silicide formed in ultra high vacuum

AU - Laszcz, A.

AU - Ratajczak, J.

AU - Czerwinski, A.

AU - Katcki, J.

AU - Srot, V.

AU - Phillipp, F.

AU - Van Aken, P.A.

AU - Yarekha, D.A.

AU - Reckinger, Nicolas

AU - Larrieu, G.

AU - Dubois, E.

PY - 2009

Y1 - 2009

M3 - Abstract

ER -

Laszcz A, Ratajczak J, Czerwinski A, Katcki J, Srot V, Phillipp F et al.. Characterization of ytterbium silicide formed in ultra high vacuum. 2009. Résumé de 16th Conference on Microscopy of Semiconducting Material, Oxford, Royaume-Uni.