Characterization of ytterbium silicide formed in ultra high vacuum

A. Łaszcz, J. Ratajczak, A. Czerwinski, J. Kâtcki, V. Srot, F. Phillipp, P.A. Van Aken, D. Yarekha, N. Reckinger, G. Larrieu, E. Dubois

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

Résumé

The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type. © 2010 IOP Publishing Ltd.
langue originaleAnglais
titreJournal of Physics : Conference Series
Volume209
Les DOIs
étatPublié - 1 janv. 2010

Empreinte digitale

ytterbium
ultrahigh vacuum
annealing
electron energy
transmission electron microscopy
high resolution
silicon
spectroscopy
x rays

Citer ceci

Łaszcz, A., Ratajczak, J., Czerwinski, A., Kâtcki, J., Srot, V., Phillipp, F., ... Dubois, E. (2010). Characterization of ytterbium silicide formed in ultra high vacuum. Dans Journal of Physics : Conference Series (Vol 209) https://doi.org/10.1088/1742-6596/209/1/012056
Łaszcz, A. ; Ratajczak, J. ; Czerwinski, A. ; Kâtcki, J. ; Srot, V. ; Phillipp, F. ; Van Aken, P.A. ; Yarekha, D. ; Reckinger, N. ; Larrieu, G. ; Dubois, E. / Characterization of ytterbium silicide formed in ultra high vacuum. Journal of Physics : Conference Series. Vol 209 2010.
@inproceedings{3c464ecbd5b44ff5b9a896541c8abb65,
title = "Characterization of ytterbium silicide formed in ultra high vacuum",
abstract = "The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type. {\circledC} 2010 IOP Publishing Ltd.",
author = "A. Łaszcz and J. Ratajczak and A. Czerwinski and J. K{\^a}tcki and V. Srot and F. Phillipp and {Van Aken}, P.A. and D. Yarekha and N. Reckinger and G. Larrieu and E. Dubois",
year = "2010",
month = "1",
day = "1",
doi = "10.1088/1742-6596/209/1/012056",
language = "English",
volume = "209",
booktitle = "Journal of Physics : Conference Series",

}

Łaszcz, A, Ratajczak, J, Czerwinski, A, Kâtcki, J, Srot, V, Phillipp, F, Van Aken, PA, Yarekha, D, Reckinger, N, Larrieu, G & Dubois, E 2010, Characterization of ytterbium silicide formed in ultra high vacuum. Dans Journal of Physics : Conference Series. VOL. 209. https://doi.org/10.1088/1742-6596/209/1/012056

Characterization of ytterbium silicide formed in ultra high vacuum. / Łaszcz, A.; Ratajczak, J.; Czerwinski, A.; Kâtcki, J.; Srot, V.; Phillipp, F.; Van Aken, P.A.; Yarekha, D.; Reckinger, N.; Larrieu, G.; Dubois, E.

Journal of Physics : Conference Series. Vol 209 2010.

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

TY - GEN

T1 - Characterization of ytterbium silicide formed in ultra high vacuum

AU - Łaszcz, A.

AU - Ratajczak, J.

AU - Czerwinski, A.

AU - Kâtcki, J.

AU - Srot, V.

AU - Phillipp, F.

AU - Van Aken, P.A.

AU - Yarekha, D.

AU - Reckinger, N.

AU - Larrieu, G.

AU - Dubois, E.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type. © 2010 IOP Publishing Ltd.

AB - The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type. © 2010 IOP Publishing Ltd.

UR - http://www.scopus.com/inward/record.url?scp=77950499288&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/209/1/012056

DO - 10.1088/1742-6596/209/1/012056

M3 - Conference contribution

VL - 209

BT - Journal of Physics : Conference Series

ER -

Łaszcz A, Ratajczak J, Czerwinski A, Kâtcki J, Srot V, Phillipp F et al. Characterization of ytterbium silicide formed in ultra high vacuum. Dans Journal of Physics : Conference Series. Vol 209. 2010 https://doi.org/10.1088/1742-6596/209/1/012056