Characterization of ytterbium silicide formed in ultra high vacuum

A. Łaszcz, J. Ratajczak, A. Czerwinski, J. Kâtcki, V. Srot, F. Phillipp, P.A. Van Aken, D. Yarekha, N. Reckinger, G. Larrieu, E. Dubois

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Résumé

The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type. © 2010 IOP Publishing Ltd.
langue originaleAnglais
titreJournal of Physics : Conference Series
Volume209
Les DOIs
Etat de la publicationPublié - 1 janv. 2010

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Contient cette citation

Łaszcz, A., Ratajczak, J., Czerwinski, A., Kâtcki, J., Srot, V., Phillipp, F., Van Aken, P. A., Yarekha, D., Reckinger, N., Larrieu, G., & Dubois, E. (2010). Characterization of ytterbium silicide formed in ultra high vacuum. Dans Journal of Physics : Conference Series (Vol 209) https://doi.org/10.1088/1742-6596/209/1/012056