Characterization of ytterbium silicide formed in ultra high vacuum

A. Łaszcz, J. Ratajczak, A. Czerwinski, J. Kâtcki, V. Srot, F. Phillipp, P.A. Van Aken, D. Yarekha, N. Reckinger, G. Larrieu, E. Dubois

    Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque


    The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type. © 2010 IOP Publishing Ltd.
    langue originaleAnglais
    titreJournal of Physics : Conference Series
    Les DOIs
    Etat de la publicationPublié - 1 janv. 2010

    Empreinte digitale Examiner les sujets de recherche de « Characterization of ytterbium silicide formed in ultra high vacuum ». Ensemble, ils forment une empreinte digitale unique.

    Contient cette citation