TY - GEN
T1 - Characterization of ytterbium silicide formed in ultra high vacuum
AU - Łaszcz, A.
AU - Ratajczak, J.
AU - Czerwinski, A.
AU - Kâtcki, J.
AU - Srot, V.
AU - Phillipp, F.
AU - Van Aken, P.A.
AU - Yarekha, D.
AU - Reckinger, N.
AU - Larrieu, G.
AU - Dubois, E.
PY - 2010/1/1
Y1 - 2010/1/1
N2 - The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type. © 2010 IOP Publishing Ltd.
AB - The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type. © 2010 IOP Publishing Ltd.
UR - http://www.scopus.com/inward/record.url?scp=77950499288&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/209/1/012056
DO - 10.1088/1742-6596/209/1/012056
M3 - Conference contribution
VL - 209
BT - Journal of Physics : Conference Series
ER -