Characterization of ytterbium silicide formed in ultra high vacuum

A. Łaszcz; J. Ratajczak; A. Czerwinski; J. Kâtcki; V. Srot; F. Phillipp; P.A. Van Aken; D. Yarekha; N. Reckinger; G. Larrieu; E. Dubois

doi:10.1088/1742-6596/209/1/012056

Characterization of ytterbium silicide formed in ultra high vacuum

A. Łaszcz, J. Ratajczak, A. Czerwinski, J. Kâtcki, V. Srot, F. Phillipp, P.A. Van Aken, D. Yarekha, N. Reckinger, G. Larrieu, E. Dubois

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférence › Article dans les actes d'une conférence/un colloque

Résumé

The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type. © 2010 IOP Publishing Ltd.

langue originale	Anglais
titre	Journal of Physics : Conference Series
Volume	209
Les DOIs	https://doi.org/10.1088/1742-6596/209/1/012056
Etat de la publication	Publié - 1 janv. 2010

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10.1088/1742-6596/209/1/012056

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Contient cette citation

@inproceedings{3c464ecbd5b44ff5b9a896541c8abb65,

title = "Characterization of ytterbium silicide formed in ultra high vacuum",

abstract = "The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type. {\textcopyright} 2010 IOP Publishing Ltd.",

author = "A. {\L}aszcz and J. Ratajczak and A. Czerwinski and J. K{\^a}tcki and V. Srot and F. Phillipp and {Van Aken}, P.A. and D. Yarekha and N. Reckinger and G. Larrieu and E. Dubois",

year = "2010",

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day = "1",

doi = "10.1088/1742-6596/209/1/012056",

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booktitle = "Journal of Physics : Conference Series",

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Characterization of ytterbium silicide formed in ultra high vacuum. / Łaszcz, A.; Ratajczak, J.; Czerwinski, A.; Kâtcki, J.; Srot, V.; Phillipp, F.; Van Aken, P.A.; Yarekha, D.; Reckinger, N.; Larrieu, G.; Dubois, E.

Journal of Physics : Conference Series. Vol 209 2010.

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférence › Article dans les actes d'une conférence/un colloque

TY - GEN

T1 - Characterization of ytterbium silicide formed in ultra high vacuum

AU - Łaszcz, A.

AU - Ratajczak, J.

AU - Czerwinski, A.

AU - Kâtcki, J.

AU - Srot, V.

AU - Phillipp, F.

AU - Van Aken, P.A.

AU - Yarekha, D.

AU - Reckinger, N.

AU - Larrieu, G.

AU - Dubois, E.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type. © 2010 IOP Publishing Ltd.

AB - The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type. © 2010 IOP Publishing Ltd.

UR - http://www.scopus.com/inward/record.url?scp=77950499288&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/209/1/012056

DO - 10.1088/1742-6596/209/1/012056

M3 - Conference contribution

VL - 209

BT - Journal of Physics : Conference Series

ER -