Cesium/xenon co-sputtering at different energies during ToF-SIMS depth profiling

Résultats de recherche: Contribution à un journal/une revueArticle

Résumé

In this paper, ToF-SIMS dual beam depth profiles of H-terminated silicon wafers were performed with cesium primary ions and for different beam energies. The aim of this study was to investigate the influence of the cesium beam energy on the secondary ion yields during ToF-SIMS dual beam depth profiling. For this purpose, both the cesium beam energy and the cesium surface concentration were varied but the analysis conditions were kept identical for all depth profiles (i.e. Ga at 25 keV, 45°). For each sputter beam energy (i.e. 250 eV, 750 eV and 2000 eV), the cesium surface concentration was varied by diluting the cesium sputtering beam by xenon ions. This technique allows performing ToF-SIMS depth profiles with cesium surface concentration varying from zero (for pure xenon beam) to a maximum value (for pure Cs beam), depending on the bombardment conditions. For all the beam energies, the Si signals were found to decrease with the increasing cesium coverage and the lower the energy, the faster the decrease. The Cs, the SiCs and the Cs signals were found to exhibit a maximum for well defined Cs/Xe mixtures, which were found to depend on the secondary ion species and on the beam energy. Moreover, the maxima were found to shift to higher Cs beam content with the increasing energy. This effect is due to the variation of the cesium surface concentration with the varying beam energy. XPS analysis of the Cs/Xe craters and DYNTRIM computer simulations allowed us to convert the cesium beam scale to a cesium surface concentration scale and to interpret our results.
langue originaleAnglais
Pages (de - à)5159-5165
Nombre de pages7
journalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume266
Numéro de publication24
Les DOIs
étatPublié - 1 déc. 2008

Empreinte digitale

Depth profiling
Xenon
Cesium
Secondary ion mass spectrometry
cesium
xenon
secondary ion mass spectrometry
Sputtering
sputtering
energy
Ions
ions
profiles
Silicon wafers
X ray photoelectron spectroscopy
craters
bombardment

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@article{9733ef19a0e84b29b803d199ebbc2e49,
title = "Cesium/xenon co-sputtering at different energies during ToF-SIMS depth profiling",
abstract = "In this paper, ToF-SIMS dual beam depth profiles of H-terminated silicon wafers were performed with cesium primary ions and for different beam energies. The aim of this study was to investigate the influence of the cesium beam energy on the secondary ion yields during ToF-SIMS dual beam depth profiling. For this purpose, both the cesium beam energy and the cesium surface concentration were varied but the analysis conditions were kept identical for all depth profiles (i.e. Ga at 25 keV, 45°). For each sputter beam energy (i.e. 250 eV, 750 eV and 2000 eV), the cesium surface concentration was varied by diluting the cesium sputtering beam by xenon ions. This technique allows performing ToF-SIMS depth profiles with cesium surface concentration varying from zero (for pure xenon beam) to a maximum value (for pure Cs beam), depending on the bombardment conditions. For all the beam energies, the Si signals were found to decrease with the increasing cesium coverage and the lower the energy, the faster the decrease. The Cs, the SiCs and the Cs signals were found to exhibit a maximum for well defined Cs/Xe mixtures, which were found to depend on the secondary ion species and on the beam energy. Moreover, the maxima were found to shift to higher Cs beam content with the increasing energy. This effect is due to the variation of the cesium surface concentration with the varying beam energy. XPS analysis of the Cs/Xe craters and DYNTRIM computer simulations allowed us to convert the cesium beam scale to a cesium surface concentration scale and to interpret our results.",
author = "J. Brison and R.G. Vitchev and L. Houssiau",
year = "2008",
month = "12",
day = "1",
doi = "10.1016/j.nimb.2008.09.021",
language = "English",
volume = "266",
pages = "5159--5165",
journal = "Nuclear Instruments and Methods in Physical Research B",
issn = "0168-583X",
publisher = "Elsevier",
number = "24",

}

TY - JOUR

T1 - Cesium/xenon co-sputtering at different energies during ToF-SIMS depth profiling

AU - Brison, J.

AU - Vitchev, R.G.

AU - Houssiau, L.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - In this paper, ToF-SIMS dual beam depth profiles of H-terminated silicon wafers were performed with cesium primary ions and for different beam energies. The aim of this study was to investigate the influence of the cesium beam energy on the secondary ion yields during ToF-SIMS dual beam depth profiling. For this purpose, both the cesium beam energy and the cesium surface concentration were varied but the analysis conditions were kept identical for all depth profiles (i.e. Ga at 25 keV, 45°). For each sputter beam energy (i.e. 250 eV, 750 eV and 2000 eV), the cesium surface concentration was varied by diluting the cesium sputtering beam by xenon ions. This technique allows performing ToF-SIMS depth profiles with cesium surface concentration varying from zero (for pure xenon beam) to a maximum value (for pure Cs beam), depending on the bombardment conditions. For all the beam energies, the Si signals were found to decrease with the increasing cesium coverage and the lower the energy, the faster the decrease. The Cs, the SiCs and the Cs signals were found to exhibit a maximum for well defined Cs/Xe mixtures, which were found to depend on the secondary ion species and on the beam energy. Moreover, the maxima were found to shift to higher Cs beam content with the increasing energy. This effect is due to the variation of the cesium surface concentration with the varying beam energy. XPS analysis of the Cs/Xe craters and DYNTRIM computer simulations allowed us to convert the cesium beam scale to a cesium surface concentration scale and to interpret our results.

AB - In this paper, ToF-SIMS dual beam depth profiles of H-terminated silicon wafers were performed with cesium primary ions and for different beam energies. The aim of this study was to investigate the influence of the cesium beam energy on the secondary ion yields during ToF-SIMS dual beam depth profiling. For this purpose, both the cesium beam energy and the cesium surface concentration were varied but the analysis conditions were kept identical for all depth profiles (i.e. Ga at 25 keV, 45°). For each sputter beam energy (i.e. 250 eV, 750 eV and 2000 eV), the cesium surface concentration was varied by diluting the cesium sputtering beam by xenon ions. This technique allows performing ToF-SIMS depth profiles with cesium surface concentration varying from zero (for pure xenon beam) to a maximum value (for pure Cs beam), depending on the bombardment conditions. For all the beam energies, the Si signals were found to decrease with the increasing cesium coverage and the lower the energy, the faster the decrease. The Cs, the SiCs and the Cs signals were found to exhibit a maximum for well defined Cs/Xe mixtures, which were found to depend on the secondary ion species and on the beam energy. Moreover, the maxima were found to shift to higher Cs beam content with the increasing energy. This effect is due to the variation of the cesium surface concentration with the varying beam energy. XPS analysis of the Cs/Xe craters and DYNTRIM computer simulations allowed us to convert the cesium beam scale to a cesium surface concentration scale and to interpret our results.

UR - http://www.scopus.com/inward/record.url?scp=56949083760&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2008.09.021

DO - 10.1016/j.nimb.2008.09.021

M3 - Article

AN - SCOPUS:56949083760

VL - 266

SP - 5159

EP - 5165

JO - Nuclear Instruments and Methods in Physical Research B

JF - Nuclear Instruments and Methods in Physical Research B

SN - 0168-583X

IS - 24

ER -