CaF2/Si(111) thin film characterization by high resolution electron-energy-loss spectroscopy

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Résumé

High-resolution electron-energy-loss spectroscopy is used to investigate surface and interface phonons for thin epitaxial CaF2 layers on Si(111). The dielectric approach used to describe the spectra is found to fail for ultrathin films. The spectra seem to show influences of strain in the film and of the crystalline quality at the interface.
langue originaleAnglais
Pages (de - à)7471-7474
Nombre de pages4
journalPhysical review. B, Condensed matter
Volume34
Les DOIs
Etat de la publicationPublié - 1986

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