Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier

D. Barba, C. Wang, A. Nélis, G. Terwagne, F. Rosei

Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs

Résumé

We investigate the effect of co-implanting a silicon sublayer on the thermal diffusion of germanium ions implanted into SiO2 and the growth of Ge nanocrystals (Ge-ncs). High-resolution imaging obtained by transmission electron microscopy and energy dispersive spectroscopy measurements supported by Monte-Carlo calculations shows that the Si-enriched region acts as a diffusion barrier for Ge atoms. This barrier prevents Ge outgassing during thermal annealing at 1100 °C. Both the localization and the reduced size of Ge-ncs formed within the sample region co-implanted with Si are observed, as well as the nucleation of mixed Ge/Si nanocrystals containing structural point defects and stacking faults. Although it was found that the Si co-implantation affects the crystallinity of the formed Ge-ncs, this technique can be implemented to produce size-selective and depth-ordered nanostructured systems by controlling the spatial distribution of diffusing Ge. We illustrate this feature for Ge-ncs embedded within a single SiO2 monolayer, whose diameters were gradually increased from 1 nm to 5 nm over a depth of 100 nm.

langue originaleAnglais
Numéro d'article161540
Nombre de pages6
journalJournal of Applied Physics
Volume123
Numéro de publication16
Les DOIs
Etat de la publicationPublié - 28 avr. 2018

Financement

This work was supported by the IXth Québec-Wallonie-Bruxelles Workgroup (project No. 09.801). F.R. acknowledges PRIMA Québec for its financial support (project No. R10–006) as well as NSERC for funding through an individual Discovery Grant and partial salary support from the Canada Research Chairs program. F.R. is also grateful to the Government of China for a Chang Jiang (short term) scholar award and Sichuan Province for a short term 1000 talent award.

Bailleurs de fondsNuméro du bailleur de fonds
Government of China
IXth Québec-Wallonie-Bruxelles WorkgroupR10–006, 09.801
Sichuan Province
Public Risk Management Association
Natural Sciences and Engineering Research Council of Canada
Canada Research Chairs

    Empreinte digitale

    Examiner les sujets de recherche de « Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier ». Ensemble, ils forment une empreinte digitale unique.

    Contient cette citation