Résumé
We investigate the effect of co-implanting a silicon sublayer on the thermal diffusion of germanium ions implanted into SiO2 and the growth of Ge nanocrystals (Ge-ncs). High-resolution imaging obtained by transmission electron microscopy and energy dispersive spectroscopy measurements supported by Monte-Carlo calculations shows that the Si-enriched region acts as a diffusion barrier for Ge atoms. This barrier prevents Ge outgassing during thermal annealing at 1100 °C. Both the localization and the reduced size of Ge-ncs formed within the sample region co-implanted with Si are observed, as well as the nucleation of mixed Ge/Si nanocrystals containing structural point defects and stacking faults. Although it was found that the Si co-implantation affects the crystallinity of the formed Ge-ncs, this technique can be implemented to produce size-selective and depth-ordered nanostructured systems by controlling the spatial distribution of diffusing Ge. We illustrate this feature for Ge-ncs embedded within a single SiO2 monolayer, whose diameters were gradually increased from 1 nm to 5 nm over a depth of 100 nm.
| langue originale | Anglais |
|---|---|
| Numéro d'article | 161540 |
| Nombre de pages | 6 |
| journal | Journal of Applied Physics |
| Volume | 123 |
| Numéro de publication | 16 |
| Les DOIs | |
| état | Publié - 28 avr. 2018 |
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Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier. / Barba, D.; Wang, C.; Nélis, A.; Terwagne, G.; Rosei, F.
Dans: Journal of Applied Physics, Vol 123, Numéro 16, 161540, 28.04.2018.Résultats de recherche: Contribution à un journal/une revue › Article
TY - JOUR
T1 - Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier
AU - Barba, D.
AU - Wang, C.
AU - Nélis, A.
AU - Terwagne, G.
AU - Rosei, F.
PY - 2018/4/28
Y1 - 2018/4/28
N2 - We investigate the effect of co-implanting a silicon sublayer on the thermal diffusion of germanium ions implanted into SiO2 and the growth of Ge nanocrystals (Ge-ncs). High-resolution imaging obtained by transmission electron microscopy and energy dispersive spectroscopy measurements supported by Monte-Carlo calculations shows that the Si-enriched region acts as a diffusion barrier for Ge atoms. This barrier prevents Ge outgassing during thermal annealing at 1100 °C. Both the localization and the reduced size of Ge-ncs formed within the sample region co-implanted with Si are observed, as well as the nucleation of mixed Ge/Si nanocrystals containing structural point defects and stacking faults. Although it was found that the Si co-implantation affects the crystallinity of the formed Ge-ncs, this technique can be implemented to produce size-selective and depth-ordered nanostructured systems by controlling the spatial distribution of diffusing Ge. We illustrate this feature for Ge-ncs embedded within a single SiO2 monolayer, whose diameters were gradually increased from 1 nm to 5 nm over a depth of 100 nm.
AB - We investigate the effect of co-implanting a silicon sublayer on the thermal diffusion of germanium ions implanted into SiO2 and the growth of Ge nanocrystals (Ge-ncs). High-resolution imaging obtained by transmission electron microscopy and energy dispersive spectroscopy measurements supported by Monte-Carlo calculations shows that the Si-enriched region acts as a diffusion barrier for Ge atoms. This barrier prevents Ge outgassing during thermal annealing at 1100 °C. Both the localization and the reduced size of Ge-ncs formed within the sample region co-implanted with Si are observed, as well as the nucleation of mixed Ge/Si nanocrystals containing structural point defects and stacking faults. Although it was found that the Si co-implantation affects the crystallinity of the formed Ge-ncs, this technique can be implemented to produce size-selective and depth-ordered nanostructured systems by controlling the spatial distribution of diffusing Ge. We illustrate this feature for Ge-ncs embedded within a single SiO2 monolayer, whose diameters were gradually increased from 1 nm to 5 nm over a depth of 100 nm.
UR - http://www.scopus.com/inward/record.url?scp=85037736813&partnerID=8YFLogxK
U2 - 10.1063/1.5002693
DO - 10.1063/1.5002693
M3 - Article
AN - SCOPUS:85037736813
VL - 123
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 16
M1 - 161540
ER -