Atomically flat GaMnN by diffusion of Mn into GaN(000 over(1, ̄))

J. Dumont, B.J. Kowalski, M. Pietrzyk, T. Seldrum, L. Houssiau, B. Douhard, I. Grzegory, S. Porowski, R. Sporken

Résultats de recherche: Contribution à un journal/une revueArticle

Résumé

The interaction of Mn thin films on atomically flat GaN(000 over(1, ̄)) has been investigated by Scanning Tunneling Microscopy (STM) and Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS). GaN surfaces prepared by repeated sputtering/annealing cycles show various reconstructions but essentially the 6×6 one. A high density of small islands (height 0.6 nm, diameter 5 nm) nucleates upon deposition of 0.3 ML Mn. Upon annealing at 575 C, these islands coalesce into larger islands (height 4 nm, diameter 50 nm) between which the GaN surface is visible. Atomically resolved STM images between the islands show the (3×3) reconstruction of GaN. Annealing the sample further to 675 C leads to the restoration of a bare GaN surface. ToF-SIMS reveals that Mn diffused into the bulk of the sample.
langue originaleAnglais
Pages (de - à)607-611
Nombre de pages5
journalSuperlattices and microstructures
Volume40
Numéro de publication4-6 SPEC. ISS.
Les DOIs
étatPublié - 1 oct. 2006

Empreinte digitale

Scanning tunneling microscopy
Annealing
Spectroscopy
Ions
annealing
scanning tunneling microscopy
mass spectroscopy
Restoration
Sputtering
restoration
Thin films
ions
sputtering
cycles
thin films
interactions

Citer ceci

Dumont, J. ; Kowalski, B.J. ; Pietrzyk, M. ; Seldrum, T. ; Houssiau, L. ; Douhard, B. ; Grzegory, I. ; Porowski, S. ; Sporken, R. / Atomically flat GaMnN by diffusion of Mn into GaN(000 over(1, ̄)). Dans: Superlattices and microstructures. 2006 ; Vol 40, Numéro 4-6 SPEC. ISS. p. 607-611.
@article{09416dd7b0d4451598166be159e10a2b,
title = "Atomically flat GaMnN by diffusion of Mn into GaN(000 over(1, ̄))",
abstract = "The interaction of Mn thin films on atomically flat GaN(000 over(1, ̄)) has been investigated by Scanning Tunneling Microscopy (STM) and Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS). GaN surfaces prepared by repeated sputtering/annealing cycles show various reconstructions but essentially the 6×6 one. A high density of small islands (height 0.6 nm, diameter 5 nm) nucleates upon deposition of 0.3 ML Mn. Upon annealing at 575 C, these islands coalesce into larger islands (height 4 nm, diameter 50 nm) between which the GaN surface is visible. Atomically resolved STM images between the islands show the (3×3) reconstruction of GaN. Annealing the sample further to 675 C leads to the restoration of a bare GaN surface. ToF-SIMS reveals that Mn diffused into the bulk of the sample.",
author = "J. Dumont and B.J. Kowalski and M. Pietrzyk and T. Seldrum and L. Houssiau and B. Douhard and I. Grzegory and S. Porowski and R. Sporken",
year = "2006",
month = "10",
day = "1",
doi = "10.1016/j.spmi.2006.07.028",
language = "English",
volume = "40",
pages = "607--611",
journal = "Superlattices and microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "4-6 SPEC. ISS.",

}

Atomically flat GaMnN by diffusion of Mn into GaN(000 over(1, ̄)). / Dumont, J.; Kowalski, B.J.; Pietrzyk, M.; Seldrum, T.; Houssiau, L.; Douhard, B.; Grzegory, I.; Porowski, S.; Sporken, R.

Dans: Superlattices and microstructures, Vol 40, Numéro 4-6 SPEC. ISS., 01.10.2006, p. 607-611.

Résultats de recherche: Contribution à un journal/une revueArticle

TY - JOUR

T1 - Atomically flat GaMnN by diffusion of Mn into GaN(000 over(1, ̄))

AU - Dumont, J.

AU - Kowalski, B.J.

AU - Pietrzyk, M.

AU - Seldrum, T.

AU - Houssiau, L.

AU - Douhard, B.

AU - Grzegory, I.

AU - Porowski, S.

AU - Sporken, R.

PY - 2006/10/1

Y1 - 2006/10/1

N2 - The interaction of Mn thin films on atomically flat GaN(000 over(1, ̄)) has been investigated by Scanning Tunneling Microscopy (STM) and Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS). GaN surfaces prepared by repeated sputtering/annealing cycles show various reconstructions but essentially the 6×6 one. A high density of small islands (height 0.6 nm, diameter 5 nm) nucleates upon deposition of 0.3 ML Mn. Upon annealing at 575 C, these islands coalesce into larger islands (height 4 nm, diameter 50 nm) between which the GaN surface is visible. Atomically resolved STM images between the islands show the (3×3) reconstruction of GaN. Annealing the sample further to 675 C leads to the restoration of a bare GaN surface. ToF-SIMS reveals that Mn diffused into the bulk of the sample.

AB - The interaction of Mn thin films on atomically flat GaN(000 over(1, ̄)) has been investigated by Scanning Tunneling Microscopy (STM) and Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS). GaN surfaces prepared by repeated sputtering/annealing cycles show various reconstructions but essentially the 6×6 one. A high density of small islands (height 0.6 nm, diameter 5 nm) nucleates upon deposition of 0.3 ML Mn. Upon annealing at 575 C, these islands coalesce into larger islands (height 4 nm, diameter 50 nm) between which the GaN surface is visible. Atomically resolved STM images between the islands show the (3×3) reconstruction of GaN. Annealing the sample further to 675 C leads to the restoration of a bare GaN surface. ToF-SIMS reveals that Mn diffused into the bulk of the sample.

UR - http://www.scopus.com/inward/record.url?scp=33845219113&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2006.07.028

DO - 10.1016/j.spmi.2006.07.028

M3 - Article

AN - SCOPUS:33845219113

VL - 40

SP - 607

EP - 611

JO - Superlattices and microstructures

JF - Superlattices and microstructures

SN - 0749-6036

IS - 4-6 SPEC. ISS.

ER -