Atomically flat GaMnN by diffusion of Mn into GaN(000 over(1, ̄))

J. Dumont, B.J. Kowalski, M. Pietrzyk, T. Seldrum, L. Houssiau, B. Douhard, I. Grzegory, S. Porowski, R. Sporken

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The interaction of Mn thin films on atomically flat GaN(000 over(1, ̄)) has been investigated by Scanning Tunneling Microscopy (STM) and Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS). GaN surfaces prepared by repeated sputtering/annealing cycles show various reconstructions but essentially the 6×6 one. A high density of small islands (height 0.6 nm, diameter 5 nm) nucleates upon deposition of 0.3 ML Mn. Upon annealing at 575 C, these islands coalesce into larger islands (height 4 nm, diameter 50 nm) between which the GaN surface is visible. Atomically resolved STM images between the islands show the (3×3) reconstruction of GaN. Annealing the sample further to 675 C leads to the restoration of a bare GaN surface. ToF-SIMS reveals that Mn diffused into the bulk of the sample.
langue originaleAnglais
Pages (de - à)607-611
Nombre de pages5
journalSuperlattices and microstructures
Numéro de publication4-6 SPEC. ISS.
Les DOIs
Etat de la publicationPublié - 1 oct. 2006

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Dumont, J., Kowalski, B. J., Pietrzyk, M., Seldrum, T., Houssiau, L., Douhard, B., Grzegory, I., Porowski, S., & Sporken, R. (2006). Atomically flat GaMnN by diffusion of Mn into GaN(000 over(1, ̄)). Superlattices and microstructures, 40(4-6 SPEC. ISS.), 607-611.