Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

C Fulk, Robert Sporken, Jacques Dumont, D Zavitz, M Trenary, B Gupta, G Brill, J Dinan, S Sivananthan

Résultats de recherche: Contribution à un journal/une revue › Article

langue originale	Anglais
Pages (de - à)	846-850
Nombre de pages	5
journal	Journal of Electronic Materials
Volume	34
Numéro de publication	6
Etat de la publication	Publié - 2005

Contient cette citation

@article{98c5f87bdcd24a48b40b21006221096c,

title = "Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces",

author = "C Fulk and Robert Sporken and Jacques Dumont and D Zavitz and M Trenary and B Gupta and G Brill and J Dinan and S Sivananthan",

year = "2005",

language = "English",

volume = "34",

pages = "846--850",

journal = "Journal of Electronic Materials",

publisher = "Springer New York",

number = "6",

}

TY - JOUR

T1 - Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

AU - Fulk, C

AU - Sporken, Robert

AU - Dumont, Jacques

AU - Zavitz, D

AU - Trenary, M

AU - Gupta, B

AU - Brill, G

AU - Dinan, J

AU - Sivananthan, S

PY - 2005

Y1 - 2005

M3 - Article

VL - 34

SP - 846

EP - 850

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 6

ER -