Application of Rubrene Air-Gap Transistors as Sensitive MEMS Physical Sensors

Marco J. Pereira, Micaela Matta, Lionel Hirsch, Isabelle Dufour, Alejandro Briseno, Sai Manoj Gali, Yoann Olivier, Luca Muccioli, Alfred Crosby, Cédric Ayela, Guillaume Wantz

Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs

Résumé

Micro-electromechanical systems (MEMS) made of organic materials have attracted efforts for the development a new generation of physical, chemical, and biological sensors, for which the electromechanical sensitivity is the current major concern. Here, we present an organic MEMS made of a rubrene single-crystal air-gap transistor. Applying mechanical pressure on the semiconductor results in high variations in drain current: an unparalleled gauge factor above 4000 has been measured experimentally. Such a high sensitivity is induced by the modulation of charge injection at the interface between the gold electrode and the rubrene semiconductor as an unusual transducing effect. Applying these devices to the detection of acoustic pressure shows that force down to 230 nN can be measured with a resolution of 40 nN. This study demonstrates that MEMS based on rubrene air-gap transistors constitute a step forward in the development of high-performance flexible sensors.

langue originaleAnglais
Pages (de - à)41570-41577
Nombre de pages8
journalACS Applied Materials and Interfaces
Volume10
Numéro de publication48
Les DOIs
Etat de la publicationPublié - 5 déc. 2018
Modification externeOui

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