A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: Influence of direct quantum tunnelling and temperature

E. Pascual, R. Rengel, N. Reckinger, X. Tang, V. Bayot, E. Dubois, M.J. Martín

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    Résumé

    In this paper we present a Monte Carlo investigation of charge transport -including quantum tunnelling effects in fabricated back-to-back n-type Schottky barriers in the reverse bias regime. The effect of the variation of the temperature over the current density and over different internal magnitudes like carrier density, electric field, etc. together with velocity distribution functions and the density of scattering mechanisms has been analyzed. The study of transport in the space charge region evidences important quasi-ballistic characteristics, thus becoming an important issue to be tackled in the modelling of Schottky-based devices with reverse biased junctions.
    langue originaleAnglais
    Pages (de - à)119-122
    Nombre de pages4
    journalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume5
    Numéro de publication1
    Les DOIs
    Etat de la publicationPublié - 1 janv. 2008

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