A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: Influence of direct quantum tunnelling and temperature

E. Pascual, R. Rengel, N. Reckinger, X. Tang, V. Bayot, E. Dubois, M.J. Martín

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Résumé

In this paper we present a Monte Carlo investigation of charge transport -including quantum tunnelling effects in fabricated back-to-back n-type Schottky barriers in the reverse bias regime. The effect of the variation of the temperature over the current density and over different internal magnitudes like carrier density, electric field, etc. together with velocity distribution functions and the density of scattering mechanisms has been analyzed. The study of transport in the space charge region evidences important quasi-ballistic characteristics, thus becoming an important issue to be tackled in the modelling of Schottky-based devices with reverse biased junctions. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.
langue originaleAnglais
titrePhysica Status Solidi (C) Current Topics in Solid State Physics
Pages119-122
Nombre de pages4
Volume5
Les DOIs
Etat de la publicationPublié - 1 janv. 2008

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Contient cette citation

Pascual, E., Rengel, R., Reckinger, N., Tang, X., Bayot, V., Dubois, E., & Martín, M. J. (2008). A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: Influence of direct quantum tunnelling and temperature. Dans Physica Status Solidi (C) Current Topics in Solid State Physics (Vol 5, p. 119-122) https://doi.org/10.1002/pssc.200776519