3D imaging of filaments in organic resistive memory devices

Yan Busby; Nicolas Crespo-Monteiro; Maria Girleanu; Martin Brinkmann; Ovidiu Ersen; Jean Jacques Pireaux

doi:10.1016/j.orgel.2014.10.039

3D imaging of filaments in organic resistive memory devices

Yan Busby, Nicolas Crespo-Monteiro, Maria Girleanu, Martin Brinkmann, Ovidiu Ersen, Jean Jacques Pireaux

Résultats de recherche: Contribution à un journal/une revue › Article › Revue par des pairs

Résumé

Filaments in organic and hybrid resistive memories are studied by combining advanced characterization techniques. Model ITO/polymer/Ag devices based on a cross-linked polystyrene layer, are investigated with XPS and ToF-SIMS depth profile analysis to provide a quantitative 3D spectroscopy showing conductive filaments forming between the two metal electrodes. Filament formation mechanisms are discussed by comparing ToF-SIMS reconstructions from pristine and electrically operated devices and by analyzing the drift and diffusion of metal cluster by cross-sectional STEM. Filaments are shown to form by the drift of silver from tips like structures which are formed during the top electrode deposition and the counter drift of indium from the ITO. The switching mechanism is interpreted in terms of reversible activation/inactivation of the same conductive path.

langue originale	Anglais
Pages (de - à)	40-45
Nombre de pages	6
journal	Organic Electronics: physics, materials, applications
Volume	16
Les DOIs	https://doi.org/10.1016/j.orgel.2014.10.039
Etat de la publication	Publié - 6 nov. 2014

Accès au document

10.1016/j.orgel.2014.10.039

Autres fichiers et liens

Link to publication in Scopus

Synthèse, Irradiation et Analyse de Matériaux (SIAM) (2016 - ...)
Louette, P. (!!Manager), Colaux, J. (!!Manager), Felten, A. (!!Manager), Tabarrant, T. (!!Operator), COME, F. (!!Operator) & Debarsy, P.-L. (!!Manager)
Plateforme technologique Synthese, irradiation et analyse des materiaux
Equipement/installations: Plateforme technolgique

Contient cette citation

@article{d13c077e8ea54de19c538b58859ee317,

title = "3D imaging of filaments in organic resistive memory devices",

abstract = "Filaments in organic and hybrid resistive memories are studied by combining advanced characterization techniques. Model ITO/polymer/Ag devices based on a cross-linked polystyrene layer, are investigated with XPS and ToF-SIMS depth profile analysis to provide a quantitative 3D spectroscopy showing conductive filaments forming between the two metal electrodes. Filament formation mechanisms are discussed by comparing ToF-SIMS reconstructions from pristine and electrically operated devices and by analyzing the drift and diffusion of metal cluster by cross-sectional STEM. Filaments are shown to form by the drift of silver from tips like structures which are formed during the top electrode deposition and the counter drift of indium from the ITO. The switching mechanism is interpreted in terms of reversible activation/inactivation of the same conductive path.",

keywords = "Filaments, Organic electronics, Organic memory devices, Resistive switching, ToF-SIMS",

author = "Yan Busby and Nicolas Crespo-Monteiro and Maria Girleanu and Martin Brinkmann and Ovidiu Ersen and Pireaux, {Jean Jacques}",

year = "2014",

month = nov,

day = "6",

doi = "10.1016/j.orgel.2014.10.039",

language = "English",

volume = "16",

pages = "40--45",

journal = "Organic Electronics: physics, materials, applications",

issn = "1566-1199",

publisher = "Elsevier",

}

TY - JOUR

T1 - 3D imaging of filaments in organic resistive memory devices

AU - Busby, Yan

AU - Crespo-Monteiro, Nicolas

AU - Girleanu, Maria

AU - Brinkmann, Martin

AU - Ersen, Ovidiu

AU - Pireaux, Jean Jacques

PY - 2014/11/6

Y1 - 2014/11/6

N2 - Filaments in organic and hybrid resistive memories are studied by combining advanced characterization techniques. Model ITO/polymer/Ag devices based on a cross-linked polystyrene layer, are investigated with XPS and ToF-SIMS depth profile analysis to provide a quantitative 3D spectroscopy showing conductive filaments forming between the two metal electrodes. Filament formation mechanisms are discussed by comparing ToF-SIMS reconstructions from pristine and electrically operated devices and by analyzing the drift and diffusion of metal cluster by cross-sectional STEM. Filaments are shown to form by the drift of silver from tips like structures which are formed during the top electrode deposition and the counter drift of indium from the ITO. The switching mechanism is interpreted in terms of reversible activation/inactivation of the same conductive path.

AB - Filaments in organic and hybrid resistive memories are studied by combining advanced characterization techniques. Model ITO/polymer/Ag devices based on a cross-linked polystyrene layer, are investigated with XPS and ToF-SIMS depth profile analysis to provide a quantitative 3D spectroscopy showing conductive filaments forming between the two metal electrodes. Filament formation mechanisms are discussed by comparing ToF-SIMS reconstructions from pristine and electrically operated devices and by analyzing the drift and diffusion of metal cluster by cross-sectional STEM. Filaments are shown to form by the drift of silver from tips like structures which are formed during the top electrode deposition and the counter drift of indium from the ITO. The switching mechanism is interpreted in terms of reversible activation/inactivation of the same conductive path.

KW - Filaments

KW - Organic electronics

KW - Organic memory devices

KW - Resistive switching

KW - ToF-SIMS

UR - http://www.scopus.com/inward/record.url?scp=84910001535&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2014.10.039

DO - 10.1016/j.orgel.2014.10.039

M3 - Article

AN - SCOPUS:84910001535

SN - 1566-1199

VL - 16

SP - 40

EP - 45

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

ER -

3D imaging of filaments in organic resistive memory devices

Résumé

Accès au document

Autres fichiers et liens

Empreinte digitale

Équipement

Synthèse, Irradiation et Analyse de Matériaux (SIAM) (2016 - ...)

Contient cette citation