3D imaging of filaments in organic resistive memory devices

Yan Busby, Nicolas Crespo-Monteiro, Maria Girleanu, Martin Brinkmann, Ovidiu Ersen, Jean Jacques Pireaux

    Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs


    Filaments in organic and hybrid resistive memories are studied by combining advanced characterization techniques. Model ITO/polymer/Ag devices based on a cross-linked polystyrene layer, are investigated with XPS and ToF-SIMS depth profile analysis to provide a quantitative 3D spectroscopy showing conductive filaments forming between the two metal electrodes. Filament formation mechanisms are discussed by comparing ToF-SIMS reconstructions from pristine and electrically operated devices and by analyzing the drift and diffusion of metal cluster by cross-sectional STEM. Filaments are shown to form by the drift of silver from tips like structures which are formed during the top electrode deposition and the counter drift of indium from the ITO. The switching mechanism is interpreted in terms of reversible activation/inactivation of the same conductive path.

    langue originaleAnglais
    Pages (de - à)40-45
    Nombre de pages6
    journalOrganic Electronics: physics, materials, applications
    Les DOIs
    Etat de la publicationPublié - 6 nov. 2014

    Empreinte digitale

    Examiner les sujets de recherche de « 3D imaging of filaments in organic resistive memory devices ». Ensemble, ils forment une empreinte digitale unique.

    Contient cette citation