INIS
graphene
100%
growth
80%
simulation
58%
copper
55%
doped materials
50%
nitrogen
33%
atoms
31%
computerized simulation
25%
carbon
25%
chemical vapor deposition
24%
monte carlo method
24%
kinetics
24%
surfaces
21%
geometry
20%
shape
17%
production
16%
deposition
16%
diffusion
16%
adsorption
15%
physical properties
8%
pyridine
6%
substrates
6%
barriers
6%
energy
6%
graphite
6%
comparative evaluations
6%
van der waals forces
5%
probability
5%
bonding
5%
defects
5%
islands
5%
nucleation
5%
size
5%
crystals
5%
density functional method
5%
interactions
5%
stability
5%
activation energy
5%
Keyphrases
Multiscale Simulation
50%
Doped Graphene
37%
Deposition Flux
29%
Kinetic Monte Carlo
25%
Growth Properties
25%
Nitrogen-doped Graphene
25%
Electronic Properties
25%
Energy Barrier
12%
Physical Properties
12%
Ab Initio Calculations
12%
Graphene Flakes
12%
Nitrogen Doping
12%
Growth Mechanism
12%
Surface Diffusion
12%
Copper Substrate
12%
Graphite-like
12%
Nitrogen Effect
12%
Modified Graphene
12%
Chemical Vapor Deposition
12%
Pyridine
12%
Nitrogen Atom
12%
Production Mechanism
12%
Simulation-based
12%
Graphene Islands
8%
Second Neighbor
8%
Dynamical Stability
8%
Free Copper
8%
2D Crystals
6%
Large-scale Samples
6%
Cu-Cu Bonding
6%
Material Science
Graphene
87%
Chemical Vapor Deposition
30%
Electronic Property
25%
Nitrogen-Doped Graphene
25%
Surface Diffusion
22%
Ab Initio Calculation
17%
Physical Property
8%
Activation Energy
5%
Density
5%
Nucleation
5%