Passer à la navigation principale
Passer à la recherche
Passer au contenu principal
Trier par
INIS
films
100%
germanium
100%
oxygen
100%
diffusion
100%
atoms
57%
silicon oxides
42%
rutherford backscattering spectroscopy
28%
layers
28%
x-ray photoelectron spectroscopy
28%
x-ray diffraction
28%
depth
14%
oxygen 16
14%
ions
14%
saturation
14%
raman spectroscopy
14%
annealing
14%
defects
14%
asymmetry
14%
stoichiometry
14%
environment
14%
mobility
14%
size
14%
recoils
14%
silicon
14%
nanocrystals
14%
dispersions
14%
Engineering
Ray Photoelectron Spectroscopy
100%
Ray Diffraction
100%
Depth Profile
50%
Induced Defect
50%
Chemical Environment
50%
Oxygen Atom
50%
Silicon Atom
50%
Keyphrases
Nanoclustering
100%
Oxygen Influence
100%
Environment Influence
16%
Atomic Recoil
16%
GeOx
16%
GeO2
16%
Implantation Induced Defects
16%
Size Dispersion
16%