INIS
annealing
21%
applications
16%
arsenic
12%
atoms
10%
barriers
27%
charges
9%
chemical vapor deposition
17%
coatings
6%
copper
14%
devices
43%
electrons
22%
energy
10%
erbium
7%
erbium silicides
12%
etching
8%
fabrication
34%
films
23%
fins
9%
gases
6%
gold
14%
graphene
69%
growth
14%
height
15%
layers
42%
length
6%
memory devices
15%
metals
16%
mosfet
19%
nanowires
12%
optimization
17%
oxidation
25%
oxygen
13%
photoemission
6%
polymers
9%
shielding
6%
silicides
23%
silicon
23%
simulation
10%
size
8%
solids
6%
stacks
6%
storage
8%
substrates
24%
surfaces
14%
temperature range 0273-0400 k
12%
thickness
11%
transistors
10%
ultrahigh vacuum
7%
width
6%
ytterbium silicides
12%
Material Science
Annealing
19%
Arsenic
16%
Charge Trapping
9%
Chemical Vapor Deposition
29%
Crystalline Material
12%
Density
9%
Dielectric Material
8%
Doping (Additives)
5%
Electronic Circuit
5%
Erbium
21%
Few-Layer Graphene
16%
Film
15%
Graphene
100%
Heterojunction
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
13%
Nanocrystalline Material
11%
Nanowires
34%
Oxidation Reaction
45%
Oxide Compound
6%
Process Simulation
9%
Raman Spectroscopy
6%
Schottky Barrier
42%
Silicide
44%
Silicon
39%
Thin Films
6%
Transistor
15%
Transmission Electron Microscopy
17%
Two-Dimensional Material
9%
Ytterbium
11%
Keyphrases
Fabrication Methods
7%
Fin Field-effect Transistor (FinFET)
9%
Flash Memory
9%
Nanogap
9%
Polysilicon
9%
Silicidation
6%
Silicide
14%
Sub-10 Nm
9%
TEM Characterization
9%
Ytterbium
9%
