INIS
graphene
71%
devices
41%
layers
40%
fabrication
32%
silicon
27%
barriers
26%
substrates
25%
oxidation
24%
silicides
22%
films
22%
chemical vapor deposition
21%
electrons
21%
annealing
20%
mosfet
18%
surfaces
18%
optimization
16%
applications
15%
metals
15%
height
14%
memory devices
14%
copper
14%
growth
13%
gold
13%
oxygen
13%
arsenic
12%
temperature range 0273-0400 k
11%
ytterbium silicides
11%
erbium silicides
11%
nanowires
11%
thickness
10%
atoms
10%
simulation
10%
transistors
10%
polymers
9%
energy
9%
charges
9%
fins
9%
etching
8%
storage
8%
size
8%
erbium
6%
ultrahigh vacuum
6%
width
6%
length
6%
gases
6%
solids
6%
stacks
6%
photoemission
6%
coatings
6%
shielding
6%
Material Science
Graphene
100%
Oxidation Reaction
43%
Silicon
42%
Silicide
41%
Schottky Barrier
40%
Nanowires
32%
Chemical Vapor Deposition
32%
Erbium
20%
Annealing
18%
Transmission Electron Microscopy
16%
Few-Layer Graphene
16%
Transistor
15%
Arsenic
15%
Film
14%
Metal-Oxide-Semiconductor Field-Effect Transistor
12%
Crystalline Material
11%
Nanocrystalline Material
10%
Ytterbium
10%
Process Simulation
9%
Charge Trapping
9%
Two-Dimensional Material
9%
Density
8%
Dielectric Material
8%
Raman Spectroscopy
7%
Thin Films
5%
Oxide Compound
5%
Electronic Circuit
5%
Heterojunction
5%
Doping (Additives)
5%
Keyphrases
Silicide
13%
Ytterbium
9%
Flash Memory
9%
Fin Field-effect Transistor (FinFET)
9%
Sub-10 Nm
9%
Nanogap
9%
Polysilicon
9%
TEM Characterization
9%
Fabrication Methods
6%
Silicidation
6%
