Abstract
Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25 ± 0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.
Original language | English |
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Pages (from-to) | 3346-3349 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 257 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1 Feb 2011 |
Externally published | Yes |
Keywords
- Epitaxy
- Intermixing
- Strain
- Valence band offset
- XPS