ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy

X. J. Wang, S. Tari, R. Sporken, S. Sivananthan

Research output: Contribution to journalArticlepeer-review

Abstract

Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25 ± 0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.

Original languageEnglish
Pages (from-to)3346-3349
Number of pages4
JournalApplied Surface Science
Volume257
Issue number8
DOIs
Publication statusPublished - 1 Feb 2011
Externally publishedYes

Keywords

  • Epitaxy
  • Intermixing
  • Strain
  • Valence band offset
  • XPS

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