ZnO(0001) surfaces probed by scanning tunneling spectroscopy: Evidence for an inhomogeneous electronic structure

J. Dumont; B. Hackens; S. Faniel; P. O. Mouthuy; R. Sporken; S. Melinte

doi:10.1063/1.3238288

ZnO(0001) surfaces probed by scanning tunneling spectroscopy: Evidence for an inhomogeneous electronic structure

J. Dumont, B. Hackens, S. Faniel, P. O. Mouthuy, R. Sporken, S. Melinte

Research output: Contribution to journal › Article › peer-review

Abstract

The stability of the polar Zn-terminated ZnO surface is probed by low-temperature scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Surface states in the bandgap of ZnO are evidenced by STS and their presence is correlated with the local surface corrugation. Very defective surface regions are characterized by a bulk electronic structure showing a wide bandgap while nanometer-scale defect free regions exhibit a narrower bandgap and surface states. We also image atomically resolved (√3 × √3) R30° reconstructions on the defect-free areas.

Original language	English
Article number	132102
Journal	Applied Physics Letters
Volume	95
Issue number	13
DOIs	https://doi.org/10.1063/1.3238288
Publication status	Published - 2009

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10.1063/1.3238288

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title = "ZnO(0001) surfaces probed by scanning tunneling spectroscopy: Evidence for an inhomogeneous electronic structure",

abstract = "The stability of the polar Zn-terminated ZnO surface is probed by low-temperature scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Surface states in the bandgap of ZnO are evidenced by STS and their presence is correlated with the local surface corrugation. Very defective surface regions are characterized by a bulk electronic structure showing a wide bandgap while nanometer-scale defect free regions exhibit a narrower bandgap and surface states. We also image atomically resolved (√3 × √3) R30° reconstructions on the defect-free areas.",

author = "J. Dumont and B. Hackens and S. Faniel and Mouthuy, {P. O.} and R. Sporken and S. Melinte",

year = "2009",

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T1 - ZnO(0001) surfaces probed by scanning tunneling spectroscopy

T2 - Evidence for an inhomogeneous electronic structure

AU - Dumont, J.

AU - Hackens, B.

AU - Faniel, S.

AU - Mouthuy, P. O.

AU - Sporken, R.

AU - Melinte, S.

PY - 2009

Y1 - 2009

N2 - The stability of the polar Zn-terminated ZnO surface is probed by low-temperature scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Surface states in the bandgap of ZnO are evidenced by STS and their presence is correlated with the local surface corrugation. Very defective surface regions are characterized by a bulk electronic structure showing a wide bandgap while nanometer-scale defect free regions exhibit a narrower bandgap and surface states. We also image atomically resolved (√3 × √3) R30° reconstructions on the defect-free areas.

AB - The stability of the polar Zn-terminated ZnO surface is probed by low-temperature scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Surface states in the bandgap of ZnO are evidenced by STS and their presence is correlated with the local surface corrugation. Very defective surface regions are characterized by a bulk electronic structure showing a wide bandgap while nanometer-scale defect free regions exhibit a narrower bandgap and surface states. We also image atomically resolved (√3 × √3) R30° reconstructions on the defect-free areas.

UR - http://www.scopus.com/inward/record.url?scp=70349676019&partnerID=8YFLogxK

U2 - 10.1063/1.3238288

DO - 10.1063/1.3238288

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VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132102

ER -

ZnO(0001) surfaces probed by scanning tunneling spectroscopy: Evidence for an inhomogeneous electronic structure

Abstract

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Scanning Tunneling Microscopy

Synthesis, Irradiation and Analysis of Materials (SIAM)

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ZnO(0001) surfaces probed by scanning tunneling spectroscopy: Evidence for an inhomogeneous electronic structure

Abstract

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Equipment

Scanning Tunneling Microscopy

Synthesis, Irradiation and Analysis of Materials (SIAM)

Cite this