Original language | English |
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Pages (from-to) | 21-25 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 235 |
Publication status | Published - 2004 |
X-ray photoelectron spectroscopy characterization of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface
Roumen Vitchev, Jean-Jacques Pireaux, Thierry Conard, H. Bender, J. Wolstenholme, Chr. Defranoux
Research output: Contribution to journal › Article