Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger; C. Poleunis; E. Dubois; C. Augustin Duu; X. Tang; A. Delcorte; J.-P. Raskin

doi:10.1063/1.3608159

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger, C. Poleunis, E. Dubois, C. Augustin Duu, X. Tang, A. Delcorte, J.-P. Raskin

Research output: Contribution to journal › Article › peer-review

Abstract

The segregation of As ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi/n-Si contacts with a low thermal budget.

Original language	English
Journal	Applied Physics Letters
Volume	99
Issue number	1
DOIs	https://doi.org/10.1063/1.3608159
Publication status	Published - 4 Jul 2011

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title = "Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation",

abstract = "The segregation of As ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi/n-Si contacts with a low thermal budget.",

author = "N. Reckinger and C. Poleunis and E. Dubois and {Augustin Duu}, C. and X. Tang and A. Delcorte and J.-P. Raskin",

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T1 - Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

AU - Reckinger, N.

AU - Poleunis, C.

AU - Dubois, E.

AU - Augustin Duu, C.

AU - Tang, X.

AU - Delcorte, A.

AU - Raskin, J.-P.

PY - 2011/7/4

Y1 - 2011/7/4

N2 - The segregation of As ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi/n-Si contacts with a low thermal budget.

AB - The segregation of As ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi/n-Si contacts with a low thermal budget.

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DO - 10.1063/1.3608159

M3 - Article

AN - SCOPUS:79960530412

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

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