Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger, C. Poleunis, E. Dubois, C. Augustin Duu, X. Tang, A. Delcorte, J.-P. Raskin

    Research output: Contribution to journalArticlepeer-review

    Abstract

    The segregation of As ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi/n-Si contacts with a low thermal budget.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume99
    Issue number1
    DOIs
    Publication statusPublished - 4 Jul 2011

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