Valence band offset at the CdS / CdTe interface

P. Boieriu; Robert Sporken; S. Sivananthan

doi:10.1116/1.1491989

Valence band offset at the CdS / CdTe interface

P. Boieriu, Robert Sporken, S. Sivananthan

Research output: Contribution to journal › Article

Abstract

Wurtzite CdS was grown by molecular beam epitaxy on CdTe(1̄1̄1̄)B and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when CdTe(1̄1̄1̄)B is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A. The valence band offset was measured by XPS and indicates a type-I alignment.

Original language	English
Pages (from-to)	1777-1780
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1491989
Publication status	Published - 2002

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10.1116/1.1491989

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title = "Valence band offset at the CdS / CdTe interface",

abstract = "Wurtzite CdS was grown by molecular beam epitaxy on CdTe({\=1}{\=1}{\=1})B and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when CdTe({\=1}{\=1}{\=1})B is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A. The valence band offset was measured by XPS and indicates a type-I alignment.",

author = "P. Boieriu and Robert Sporken and S. Sivananthan",

year = "2002",

doi = "10.1116/1.1491989",

language = "English",

volume = "20",

pages = "1777--1780",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

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T1 - Valence band offset at the CdS / CdTe interface

AU - Boieriu, P.

AU - Sporken, Robert

AU - Sivananthan, S.

PY - 2002

Y1 - 2002

N2 - Wurtzite CdS was grown by molecular beam epitaxy on CdTe(1̄1̄1̄)B and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when CdTe(1̄1̄1̄)B is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A. The valence band offset was measured by XPS and indicates a type-I alignment.

AB - Wurtzite CdS was grown by molecular beam epitaxy on CdTe(1̄1̄1̄)B and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when CdTe(1̄1̄1̄)B is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A. The valence band offset was measured by XPS and indicates a type-I alignment.

U2 - 10.1116/1.1491989

DO - 10.1116/1.1491989

M3 - Article

SN - 1071-1023

VL - 20

SP - 1777

EP - 1780

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Valence band offset at the CdS / CdTe interface

Abstract

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