TY - JOUR
T1 - Unraveling Unprecedented Charge Carrier Mobility through Structure Property Relationship of Four Isomers of Didodecyl[1]benzothieno[3,2-b][1]benzothiophene
AU - Tsutsui, Yusuke
AU - Schweicher, Guillaume
AU - Chattopadhyay, Basab
AU - Sakurai, Tsuneaki
AU - Arlin, Jean Baptiste
AU - Ruzié, Christian
AU - Aliev, Almaz
AU - Ciesielski, Artur
AU - Colella, Silvia
AU - Kennedy, Alan R.
AU - Lemaur, Vincent
AU - Olivier, Yoann
AU - Hadji, Rachid
AU - Sanguinet, Lionel
AU - Castet, Frédéric
AU - Osella, Silvio
AU - Dudenko, Dmytro
AU - Beljonne, David
AU - Cornil, Jérôme
AU - Samorì, Paolo
AU - Seki, Shu
AU - Geerts, Yves H.
PY - 2016/1/1
Y1 - 2016/1/1
N2 - The structural and electronic properties of four isomers of didodecyl[1]benzothieno[3,2- b ][1]benzothiophene was investigated. FI-TRMC measurements enabled us to probe the local intrinsic charge carrier transport of those materials, among which 2,7-didodecyl[1]benzothieno[3,2- b][1]-benzothiophene was found to exhibit a strikingly high average interfacial mobility demonstrate that the transport in second isomer operates within the band regime, which we associate with the 2D character of the crystal and the limited thermal fluctuations in electronic transfer integrals. Bulk structure determination of the different BTBT derivatives was realized by single-crystal X-ray diffraction. Classical mobility measurement in OFETs on polycrystalline thin films only confirms the well-established good charge transport properties of second isomer. Devices made from one, three and fourth isomers strongly impacted by their extremely deep ionization potentials, hampering the injection of charges within the accumulation layer. The use of higher electric fields (higher charge carrier density) certainly make the carriers to get strongly attracted by the interface where they have to be subjected to scattering effects.
AB - The structural and electronic properties of four isomers of didodecyl[1]benzothieno[3,2- b ][1]benzothiophene was investigated. FI-TRMC measurements enabled us to probe the local intrinsic charge carrier transport of those materials, among which 2,7-didodecyl[1]benzothieno[3,2- b][1]-benzothiophene was found to exhibit a strikingly high average interfacial mobility demonstrate that the transport in second isomer operates within the band regime, which we associate with the 2D character of the crystal and the limited thermal fluctuations in electronic transfer integrals. Bulk structure determination of the different BTBT derivatives was realized by single-crystal X-ray diffraction. Classical mobility measurement in OFETs on polycrystalline thin films only confirms the well-established good charge transport properties of second isomer. Devices made from one, three and fourth isomers strongly impacted by their extremely deep ionization potentials, hampering the injection of charges within the accumulation layer. The use of higher electric fields (higher charge carrier density) certainly make the carriers to get strongly attracted by the interface where they have to be subjected to scattering effects.
KW - high mobility
KW - intrinsic charge carrier transport
KW - organic semiconductors
KW - structure-property relationship
KW - time-resolved microwave conductivity
UR - http://www.scopus.com/inward/record.url?scp=84984924941&partnerID=8YFLogxK
U2 - 10.1002/adma.201601285
DO - 10.1002/adma.201601285
M3 - Article
C2 - 27226066
AN - SCOPUS:84984924941
SN - 0935-9648
SP - 7106
EP - 7114
JO - Advanced materials
JF - Advanced materials
ER -