UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for N-type MOSFET

D.A. Yarekha; G. Larrieu; N. Breil; E. Dubois; S. Godey; X. Wallart; C. Soyer; D. Remiens; N. Reckinger; X. Tang; A. Laszcz; J. Ratajczak; A. Halimaoui

doi:10.1149/1.3118961

UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for N-type MOSFET

D.A. Yarekha, G. Larrieu, N. Breil, E. Dubois, S. Godey, X. Wallart, C. Soyer, D. Remiens, N. Reckinger, X. Tang, A. Laszcz, J. Ratajczak, A. Halimaoui

Research output: Contribution in Book/Catalog/Report/Conference proceeding › Conference contribution

Abstract

Ytterbium silicide provides a low Schottky barrier height to electron on n-type silicon. This property makes this material very attractive for the realization of Source/Drain contacts for n-type MOSFETs. In this communication, the study of structural and electrical properties of YbSi fabricated at different temperature in Ultra-High Vacuum condition without any protective layers is presented. N-type SB-MOSFETs with ytterbium silicide based S/D contacts were fabricated at optimal silicidation temperatures on SOI substrate with an ultra thin body.

Original language	English
Title of host publication	ECS Transactions
Pages	339-344
Number of pages	6
Volume	19
DOIs	https://doi.org/10.1149/1.3118961
Publication status	Published - 1 Jan 2009

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10.1149/1.3118961

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abstract = "Ytterbium silicide provides a low Schottky barrier height to electron on n-type silicon. This property makes this material very attractive for the realization of Source/Drain contacts for n-type MOSFETs. In this communication, the study of structural and electrical properties of YbSi fabricated at different temperature in Ultra-High Vacuum condition without any protective layers is presented. N-type SB-MOSFETs with ytterbium silicide based S/D contacts were fabricated at optimal silicidation temperatures on SOI substrate with an ultra thin body.",

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AU - Yarekha, D.A.

AU - Larrieu, G.

AU - Breil, N.

AU - Dubois, E.

AU - Godey, S.

AU - Wallart, X.

AU - Soyer, C.

AU - Remiens, D.

AU - Reckinger, N.

AU - Tang, X.

AU - Laszcz, A.

AU - Ratajczak, J.

AU - Halimaoui, A.

PY - 2009/1/1

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AB - Ytterbium silicide provides a low Schottky barrier height to electron on n-type silicon. This property makes this material very attractive for the realization of Source/Drain contacts for n-type MOSFETs. In this communication, the study of structural and electrical properties of YbSi fabricated at different temperature in Ultra-High Vacuum condition without any protective layers is presented. N-type SB-MOSFETs with ytterbium silicide based S/D contacts were fabricated at optimal silicidation temperatures on SOI substrate with an ultra thin body.

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VL - 19

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EP - 344

BT - ECS Transactions

ER -

UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for N-type MOSFET

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