UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET

D.A. Yarekha; G. Larrieu; N. Breil; E. Dubois; SYLVIE GODEY; X. Wallart; C. Soyer; D. Remiens; Nicolas Reckinger; Xiaohui Tang; A. Laszcz; J. Ratajczak; A. Halimaoui

UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET

D.A. Yarekha, G. Larrieu, N. Breil, E. Dubois, SYLVIE GODEY, X. Wallart, C. Soyer, D. Remiens, Nicolas Reckinger, Xiaohui Tang, A. Laszcz, J. Ratajczak, A. Halimaoui

Research output: Contribution to conference › Abstract › peer-review

Original language	English
Publication status	Published - 2009
Event	215th Electrochemical Society Meeting - San Francisco, United States Duration: 24 May 2009 → 29 May 2009

Scientific committee

Scientific committee	215th Electrochemical Society Meeting
Country/Territory	United States
City	San Francisco
Period	24/05/09 → 29/05/09

Cite this

Yarekha, D. A., Larrieu, G., Breil, N., Dubois, E., GODEY, SYLVIE., Wallart, X., Soyer, C., Remiens, D., Reckinger, N., Tang, X., Laszcz, A., Ratajczak, J., & Halimaoui, A. (2009). UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET. Abstract from 215th Electrochemical Society Meeting, San Francisco, United States.

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title = "UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET",

author = "D.A. Yarekha and G. Larrieu and N. Breil and E. Dubois and SYLVIE GODEY and X. Wallart and C. Soyer and D. Remiens and Nicolas Reckinger and Xiaohui Tang and A. Laszcz and J. Ratajczak and A. Halimaoui",

year = "2009",

language = "English",

note = "215th Electrochemical Society Meeting ; Conference date: 24-05-2009 Through 29-05-2009",

}

Yarekha, DA, Larrieu, G, Breil, N, Dubois, E, GODEY, SYLVIE, Wallart, X, Soyer, C, Remiens, D, Reckinger, N, Tang, X, Laszcz, A, Ratajczak, J & Halimaoui, A 2009, 'UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET', 215th Electrochemical Society Meeting, San Francisco, United States, 24/05/09 - 29/05/09.

TY - CONF

T1 - UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET

AU - Yarekha, D.A.

AU - Larrieu, G.

AU - Breil, N.

AU - Dubois, E.

AU - GODEY, SYLVIE

AU - Wallart, X.

AU - Soyer, C.

AU - Remiens, D.

AU - Reckinger, Nicolas

AU - Tang, Xiaohui

AU - Laszcz, A.

AU - Ratajczak, J.

AU - Halimaoui, A.

PY - 2009

Y1 - 2009

M3 - Abstract

T2 - 215th Electrochemical Society Meeting

Y2 - 24 May 2009 through 29 May 2009

ER -