UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET

D.A. Yarekha, G. Larrieu, N. Breil, E. Dubois, SYLVIE GODEY, X. Wallart, C. Soyer, D. Remiens, Nicolas Reckinger, Xiaohui Tang, A. Laszcz, J. Ratajczak, A. Halimaoui

    Research output: Contribution to conferenceAbstractpeer-review

    Original languageEnglish
    Publication statusPublished - 2009
    Event215th Electrochemical Society Meeting - San Francisco, United States
    Duration: 24 May 200929 May 2009

    Scientific committee

    Scientific committee215th Electrochemical Society Meeting
    CountryUnited States
    CitySan Francisco
    Period24/05/0929/05/09

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