Abstract
In this paper we report on the implementation of an uncoated silicon (Si) cantilever probe into a transmission scanning near-field optical microscopy (SNOM) architecture. In a first stage, the expected transmission behaviour of a sharp silicon probe is investigated by calculating the complete electric field distribution both inside and outside a silicon tip facing a sample. Experimental applications using near-infrared radiation λ = 1.06 μm) are then proposed. In particular, compact disc features (Ax ≤ 1 μm) were imaged successfully with our setup (lateral resolution: better than 250 nm). Furthermore, when dealing with finer sample structures (Δx ≤ 100 nm), topography artifacts were clearly evidenced. The resulting highly resolved images of nanostructures are to be attributed to some interference effects occurring between the illuminated probe and the sample.
Original language | English |
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Pages (from-to) | 371-377 |
Number of pages | 7 |
Journal | Ultramicroscopy |
Volume | 71 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1 Mar 1998 |
Event | Proceedings of the 1997 4th International Conference on Near-Field Optics and Related Techniques, NFO-4 - Jerusalem, Israel Duration: 9 Feb 1997 → 13 Feb 1997 |
Keywords
- Atomic-force microscopy (AFM)
- Near-field optical microscopy (NFOM)
- Tip- scanning instrumentation design and characterization