Towards solution-processed ambipolar organic thin film transistors based on a,ω-hexyl-distyryl-bithiophene (DH-DS 2T) and a fluorocarbon-substituted dicyanoperylene (PDIF-CN 2)

S Nénon; T Watanabe; H Brisset; Z Chen; J Ackermann; F Fages; S Bernardini; K Aguir; N Yoshimoto

Towards solution-processed ambipolar organic thin film transistors based on a,ω-hexyl-distyryl-bithiophene (DH-DS ₂T) and a fluorocarbon-substituted dicyanoperylene (PDIF-CN ₂)

S Nénon, T Watanabe, H Brisset, Z Chen, J Ackermann, F Fages, S Bernardini, K Aguir, N Yoshimoto

Research output: Contribution to journal › Article › peer-review

Abstract

Drop casting of solutions based on oligomers as active layers in organic thin film transistors (OTFTs) was studied towards the realization of solution-processed ambipolar devices. As p- and n-type semiconductors, a,?-hexyl-distyryl-bithiophene (DH-DS T) and N,N'-1H,1H- perfluorobutyl dicyanoperylenediimide (PDIF-CN2) were used, respectively. Solutions were prepared by mixing different ratios of PDIF-CN2 versus DH-DS T. Structure and morphology of thin films were studied by Xray diffraction (XRD) and atomic force microscopy (AFM). With the fine tuning of PDIF-CN2 amount, both p- and n- charge carrier transport could be measured in OTFT devices based on blend DH-DS T:PDIF-CN2 as active layer to form so-called ambipolar OTFTs.

Original language	English
Pages (from-to)	131-135
Number of pages	5
Journal	Journal of Optoelectronics and Advanced Materials
Volume	14
Issue number	1-2
Publication status	Published - 2012

Keywords

ambipolar transport,drop casting,morphology,organic semiconductors,x-ray diffraction

Cite this

Nénon, S., Watanabe, T., Brisset, H., Chen, Z., Ackermann, J., Fages, F., Bernardini, S., Aguir, K., & Yoshimoto, N. (2012). Towards solution-processed ambipolar organic thin film transistors based on a,ω-hexyl-distyryl-bithiophene (DH-DS ₂T) and a fluorocarbon-substituted dicyanoperylene (PDIF-CN ₂). Journal of Optoelectronics and Advanced Materials, 14(1-2), 131-135.

@article{919f8ff4df28455ca186fdbd5115891e,

title = "Towards solution-processed ambipolar organic thin film transistors based on a,ω-hexyl-distyryl-bithiophene (DH-DS 2T) and a fluorocarbon-substituted dicyanoperylene (PDIF-CN 2)",

abstract = "Drop casting of solutions based on oligomers as active layers in organic thin film transistors (OTFTs) was studied towards the realization of solution-processed ambipolar devices. As p- and n-type semiconductors, a,?-hexyl-distyryl-bithiophene (DH-DS T) and N,N'-1H,1H- perfluorobutyl dicyanoperylenediimide (PDIF-CN2) were used, respectively. Solutions were prepared by mixing different ratios of PDIF-CN2 versus DH-DS T. Structure and morphology of thin films were studied by Xray diffraction (XRD) and atomic force microscopy (AFM). With the fine tuning of PDIF-CN2 amount, both p- and n- charge carrier transport could be measured in OTFT devices based on blend DH-DS T:PDIF-CN2 as active layer to form so-called ambipolar OTFTs.",

keywords = "ambipolar transport,drop casting,morphology,organic semiconductors,x-ray diffraction",

author = "S N{\'e}non and T Watanabe and H Brisset and Z Chen and J Ackermann and F Fages and S Bernardini and K Aguir and N Yoshimoto",

year = "2012",

language = "English",

volume = "14",

pages = "131--135",

journal = "Journal of Optoelectronics and Advanced Materials",

issn = "1454-4164",

publisher = "National Institute of Optoelectronics",

number = "1-2",

}

Nénon, S, Watanabe, T, Brisset, H, Chen, Z, Ackermann, J, Fages, F, Bernardini, S, Aguir, K & Yoshimoto, N 2012, 'Towards solution-processed ambipolar organic thin film transistors based on a,ω-hexyl-distyryl-bithiophene (DH-DS ₂T) and a fluorocarbon-substituted dicyanoperylene (PDIF-CN ₂)', Journal of Optoelectronics and Advanced Materials, vol. 14, no. 1-2, pp. 131-135.

Towards solution-processed ambipolar organic thin film transistors based on a,ω-hexyl-distyryl-bithiophene (DH-DS ₂T) and a fluorocarbon-substituted dicyanoperylene (PDIF-CN ₂). / Nénon, S; Watanabe, T; Brisset, H et al.
In: Journal of Optoelectronics and Advanced Materials, Vol. 14, No. 1-2, 2012, p. 131-135.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Towards solution-processed ambipolar organic thin film transistors based on a,ω-hexyl-distyryl-bithiophene (DH-DS 2T) and a fluorocarbon-substituted dicyanoperylene (PDIF-CN 2)

AU - Nénon, S

AU - Watanabe, T

AU - Brisset, H

AU - Chen, Z

AU - Ackermann, J

AU - Fages, F

AU - Bernardini, S

AU - Aguir, K

AU - Yoshimoto, N

PY - 2012

Y1 - 2012

N2 - Drop casting of solutions based on oligomers as active layers in organic thin film transistors (OTFTs) was studied towards the realization of solution-processed ambipolar devices. As p- and n-type semiconductors, a,?-hexyl-distyryl-bithiophene (DH-DS T) and N,N'-1H,1H- perfluorobutyl dicyanoperylenediimide (PDIF-CN2) were used, respectively. Solutions were prepared by mixing different ratios of PDIF-CN2 versus DH-DS T. Structure and morphology of thin films were studied by Xray diffraction (XRD) and atomic force microscopy (AFM). With the fine tuning of PDIF-CN2 amount, both p- and n- charge carrier transport could be measured in OTFT devices based on blend DH-DS T:PDIF-CN2 as active layer to form so-called ambipolar OTFTs.

AB - Drop casting of solutions based on oligomers as active layers in organic thin film transistors (OTFTs) was studied towards the realization of solution-processed ambipolar devices. As p- and n-type semiconductors, a,?-hexyl-distyryl-bithiophene (DH-DS T) and N,N'-1H,1H- perfluorobutyl dicyanoperylenediimide (PDIF-CN2) were used, respectively. Solutions were prepared by mixing different ratios of PDIF-CN2 versus DH-DS T. Structure and morphology of thin films were studied by Xray diffraction (XRD) and atomic force microscopy (AFM). With the fine tuning of PDIF-CN2 amount, both p- and n- charge carrier transport could be measured in OTFT devices based on blend DH-DS T:PDIF-CN2 as active layer to form so-called ambipolar OTFTs.

KW - ambipolar transport,drop casting,morphology,organic semiconductors,x-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=84860433565&partnerID=8YFLogxK

M3 - Article

SN - 1454-4164

VL - 14

SP - 131

EP - 135

JO - Journal of Optoelectronics and Advanced Materials

JF - Journal of Optoelectronics and Advanced Materials

IS - 1-2

ER -

Towards solution-processed ambipolar organic thin film transistors based on a,ω-hexyl-distyryl-bithiophene (DH-DS ₂T) and a fluorocarbon-substituted dicyanoperylene (PDIF-CN ₂)

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