Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: Synthesis, characterization and electronic properties

Claude Niebel, Yeongin Kim, Christian Ruzié, Jolanta Karpinska, Basab Chattopadhyay, Guillaume Schweicher, Audrey Richard, Vincent Lemaur, Yoann Olivier, Jérôme Cornil, Alan R. Kennedy, Ying Diao, Wen Ya Lee, Stefan Mannsfeld, Zhenan Bao, Yves H. Geerts

Research output: Contribution to journalArticle

Abstract

Two thienoacene dimers based on the thieno[3,2-b]thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm2 V-1 s-1.

Original languageEnglish
Pages (from-to)674-685
Number of pages12
JournalJournal of Materials Chemistry C
Volume3
Issue number3
DOIs
Publication statusPublished - 21 Jan 2015
Externally publishedYes

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    Niebel, C., Kim, Y., Ruzié, C., Karpinska, J., Chattopadhyay, B., Schweicher, G., Richard, A., Lemaur, V., Olivier, Y., Cornil, J., Kennedy, A. R., Diao, Y., Lee, W. Y., Mannsfeld, S., Bao, Z., & Geerts, Y. H. (2015). Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: Synthesis, characterization and electronic properties. Journal of Materials Chemistry C, 3(3), 674-685. https://doi.org/10.1039/c4tc02158d