@article{fa032329452d4b9491737084d3c83143,
title = "Thermally Induced Fullerene Domain Coarsening Process in Organic Solar Cells",
abstract = "The recent advancements in power conversion efficiency for organic solar cells is still complained by their reliability and stability remaining the main bottlenecks for organic photovoltaics large scale production and commercialization. In this paper, we aim to provide further insights understanding in degradation processes affecting stability in small molecule flat heterojunction (Glass/ITO/MoO 3/ZnPc/C 60/BCP/Ag) solar cells through a systematic aging study coupled with optoelectrical characterizations. In particular, the burn-in phenomenon affecting short-circuit current in thermal-stressed samples has been clearly correlated with the C 60 domain coarsening process and eventually to the decreased exciton lifetime. ",
keywords = "Burn-in effect, degradation mechanisms, organic solar cells (OSCs) stability, spectroelectrochemical characterization techniques.",
author = "Antonio Agresti and Sara Pescetelli and Yan Busby and Tom Aernouts",
note = "Funding Information: This work was supported by the European Union's Horizon 2020 Research and Innovation Programme-GrapheneCore2 under Grant 785219. Funding Information: Manuscript received August 17, 2018; revised October 22, 2018; accepted November 2, 2018. Date of publication November 26, 2018; date of current version December 24, 2018. This work was supported by the European Union{\textquoteright}s Horizon 2020 Research and Innovation Programme–GrapheneCore2 under Grant 785219. The review of this paper was arranged by Editor A. G. Aberle. (Corresponding author: Antonio Agresti.) A. Agresti is with the Electrical Engineering Department, University of Rome Tor Vergata, 00133 Rome, Italy, and also with the Thin-Film Photovoltaics Group, PV Department, imec, 3001 Leuven, Belgium (e-mail: antonio.agresti@uniroma2.it). Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2019",
month = jan,
day = "1",
doi = "10.1109/ted.2018.2880760",
language = "English",
volume = "66",
pages = "678--688",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers",
number = "1",
}