The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition

N. Reckinger, A. Felten, C.N. Santos, B. Hackens, J.-F. Colomer

Research output: Contribution to journalArticle

Abstract

The growth of graphene on copper by atmospheric pressure chemical vapor deposition in a system free of pumping equipment is investigated. The emphasis is put on the necessity of hydrogen presence during graphene synthesis and cooling. In the absence of hydrogen during the growth step or during cooling at slow rate, weak carbon coverage, consisting mostly of oxidized and amorphous carbon, is obtained on the copper catalyst. The oxidation originates from the inevitable occurrence of residual oxidizing impurities in the reactor's atmosphere. Graphene with appreciable coverage can be grown within the vacuum-free furnace only upon admitting hydrogen during the growth step. After formation, graphene is preserved from the destructive effect of residual oxidizing contaminants if exposure at high temperature is minimized by fast cooling or if cooling down is performed under the protection of hydrogen. Under these conditions, micrometer-sized hexagon-shaped graphene domains of high structural quality are achieved.
Original languageEnglish
Pages (from-to)84-91
Number of pages8
JournalCarbon
Volume63
DOIs
Publication statusPublished - 1 Nov 2013

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Atmospheric pressure
Chemical vapor deposition
Impurities
Hydrogen
Cooling
Copper
Amorphous carbon
Furnaces
Carbon
Vacuum
Oxidation
Catalysts
Temperature

Cite this

@article{e181e9a65584495aa4ce6b7a21cb6597,
title = "The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition",
abstract = "The growth of graphene on copper by atmospheric pressure chemical vapor deposition in a system free of pumping equipment is investigated. The emphasis is put on the necessity of hydrogen presence during graphene synthesis and cooling. In the absence of hydrogen during the growth step or during cooling at slow rate, weak carbon coverage, consisting mostly of oxidized and amorphous carbon, is obtained on the copper catalyst. The oxidation originates from the inevitable occurrence of residual oxidizing impurities in the reactor's atmosphere. Graphene with appreciable coverage can be grown within the vacuum-free furnace only upon admitting hydrogen during the growth step. After formation, graphene is preserved from the destructive effect of residual oxidizing contaminants if exposure at high temperature is minimized by fast cooling or if cooling down is performed under the protection of hydrogen. Under these conditions, micrometer-sized hexagon-shaped graphene domains of high structural quality are achieved.",
author = "N. Reckinger and A. Felten and C.N. Santos and B. Hackens and J.-F. Colomer",
year = "2013",
month = "11",
day = "1",
doi = "10.1016/j.carbon.2013.06.042",
language = "English",
volume = "63",
pages = "84--91",
journal = "Carbon",
issn = "0008-6223",
publisher = "Elsevier Limited",

}

The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition. / Reckinger, N.; Felten, A.; Santos, C.N.; Hackens, B.; Colomer, J.-F.

In: Carbon, Vol. 63, 01.11.2013, p. 84-91.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition

AU - Reckinger, N.

AU - Felten, A.

AU - Santos, C.N.

AU - Hackens, B.

AU - Colomer, J.-F.

PY - 2013/11/1

Y1 - 2013/11/1

N2 - The growth of graphene on copper by atmospheric pressure chemical vapor deposition in a system free of pumping equipment is investigated. The emphasis is put on the necessity of hydrogen presence during graphene synthesis and cooling. In the absence of hydrogen during the growth step or during cooling at slow rate, weak carbon coverage, consisting mostly of oxidized and amorphous carbon, is obtained on the copper catalyst. The oxidation originates from the inevitable occurrence of residual oxidizing impurities in the reactor's atmosphere. Graphene with appreciable coverage can be grown within the vacuum-free furnace only upon admitting hydrogen during the growth step. After formation, graphene is preserved from the destructive effect of residual oxidizing contaminants if exposure at high temperature is minimized by fast cooling or if cooling down is performed under the protection of hydrogen. Under these conditions, micrometer-sized hexagon-shaped graphene domains of high structural quality are achieved.

AB - The growth of graphene on copper by atmospheric pressure chemical vapor deposition in a system free of pumping equipment is investigated. The emphasis is put on the necessity of hydrogen presence during graphene synthesis and cooling. In the absence of hydrogen during the growth step or during cooling at slow rate, weak carbon coverage, consisting mostly of oxidized and amorphous carbon, is obtained on the copper catalyst. The oxidation originates from the inevitable occurrence of residual oxidizing impurities in the reactor's atmosphere. Graphene with appreciable coverage can be grown within the vacuum-free furnace only upon admitting hydrogen during the growth step. After formation, graphene is preserved from the destructive effect of residual oxidizing contaminants if exposure at high temperature is minimized by fast cooling or if cooling down is performed under the protection of hydrogen. Under these conditions, micrometer-sized hexagon-shaped graphene domains of high structural quality are achieved.

UR - http://www.scopus.com/inward/record.url?scp=84881610650&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2013.06.042

DO - 10.1016/j.carbon.2013.06.042

M3 - Article

VL - 63

SP - 84

EP - 91

JO - Carbon

JF - Carbon

SN - 0008-6223

ER -