TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs

J. Ratajczak, A. ŁAszcz, A. Czerwinski, J. Katcki, X. Tang, N. Reckinger, D.A. Yarekha, G. Larrieu, E. Dubois

    Research output: Contribution to journalMeeting abstractpeer-review

    Abstract

    The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.
    Original languageEnglish
    JournalActa physica Polonica. A
    Volume116
    Issue numberSUPPL.
    Publication statusPublished - 1 Jan 2009

    Fingerprint

    Dive into the research topics of 'TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs'. Together they form a unique fingerprint.

    Cite this