Sub-10-nm nanogap fabrication by silicidation

Xiaohui Tang; Laurent A. Francis; Constantin Augustin Dutu; Nicolas Reckinger; Jean Pierre Raskin

doi:10.1109/NANO.2013.6720811

Sub-10-nm nanogap fabrication by silicidation

Xiaohui Tang, Laurent A. Francis, Constantin Augustin Dutu, Nicolas Reckinger, Jean Pierre Raskin

Research output: Contribution in Book/Catalog/Report/Conference proceeding › Conference contribution

Abstract

We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation. The nanogap width is determined by the metal layer thickness. Our proposed method provides nanogaps with either symmetric or asymmetric electrodes, as well as multiple nanogaps within one unique process step. Therefore, this method allows for high throughput and large-scale production.

Original language	English
Title of host publication	Proceedings of the IEEE Conference on Nanotechnology
Pages	570-573
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2013.6720811
Publication status	Published - 1 Dec 2013
Event	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China Duration: 5 Aug 2013 → 8 Aug 2013

Conference

Conference	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Country/Territory	China
City	Beijing
Period	5/08/13 → 8/08/13

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10.1109/NANO.2013.6720811

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title = "Sub-10-nm nanogap fabrication by silicidation",

abstract = "We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation. The nanogap width is determined by the metal layer thickness. Our proposed method provides nanogaps with either symmetric or asymmetric electrodes, as well as multiple nanogaps within one unique process step. Therefore, this method allows for high throughput and large-scale production.",

author = "Xiaohui Tang and Francis, {Laurent A.} and Dutu, {Constantin Augustin} and Nicolas Reckinger and Raskin, {Jean Pierre}",

year = "2013",

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doi = "10.1109/NANO.2013.6720811",

language = "English",

isbn = "9781479906758",

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AU - Tang, Xiaohui

AU - Francis, Laurent A.

AU - Dutu, Constantin Augustin

AU - Reckinger, Nicolas

AU - Raskin, Jean Pierre

PY - 2013/12/1

Y1 - 2013/12/1

N2 - We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation. The nanogap width is determined by the metal layer thickness. Our proposed method provides nanogaps with either symmetric or asymmetric electrodes, as well as multiple nanogaps within one unique process step. Therefore, this method allows for high throughput and large-scale production.

AB - We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation. The nanogap width is determined by the metal layer thickness. Our proposed method provides nanogaps with either symmetric or asymmetric electrodes, as well as multiple nanogaps within one unique process step. Therefore, this method allows for high throughput and large-scale production.

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U2 - 10.1109/NANO.2013.6720811

DO - 10.1109/NANO.2013.6720811

M3 - Conference contribution

AN - SCOPUS:84894137612

SN - 9781479906758

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EP - 573

BT - Proceedings of the IEEE Conference on Nanotechnology

T2 - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013

Y2 - 5 August 2013 through 8 August 2013

ER -

Sub-10-nm nanogap fabrication by silicidation

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