Study of the Pd-Rh interdiffusion by ToF-SIMS, RBS and PIXE: Semi-quantitative depth profiles with MCs+ clusters

J. Brison, R. Hubert, S. Lucas, L. Houssiau

Research output: Contribution to journalArticle

Abstract

In this paper, ToF-SIMS was used to study the Pd-Rh interdiffusion which has a great interest in brachytherapy, a cancer treatment. The secondary ion mass spectrometry was used in the semi-quantitative MCs mode, by detecting the RhCs and the PdCs molecular ions under cesium bombardment. At first, different RhPd (from pure Rh to pure Pd) layers were deposited by PVD and were subsequently characterized by ToF-SIMS, RBS and PIXE. A linear relationship between the relative CsPd yields and the Pd concentration into the Rh matrices was found. Moreover, the total sputtering yield increases linearly with the Pd concentration. Those relationships permitted to calibrate the ToF-SIMS depth profiles of annealed Pd/Rh layers and were successfully used to quantify the Pd-Rh interdiffusion.
Original languageEnglish
Pages (from-to)7038-7040
Number of pages3
JournalApplied Surface Science
Volume252
Issue number19
DOIs
Publication statusPublished - 30 Jul 2006

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