Study of the electronic properties and depth profiles of buried and near-surface silicon nitride layers produced by ion implantation

Andreas Markwitz, M. Arps, H. Baumann, Guy Demortier, E.F. Krimmel, K. Bethge

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	506-514
Number of pages	9
Journal	Nuclear instruments and methods
Volume	B124
Publication status	Published - 1997

Cite this

@article{3a2a78e4f47b4d25b865dec6a4316464,

title = "Study of the electronic properties and depth profiles of buried and near-surface silicon nitride layers produced by ion implantation",

author = "Andreas Markwitz and M. Arps and H. Baumann and Guy Demortier and E.F. Krimmel and K. Bethge",

year = "1997",

language = "English",

volume = "B124",

pages = "506--514",

journal = "Nuclear instruments and methods",

issn = "0029-554X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Study of the electronic properties and depth profiles of buried and near-surface silicon nitride layers produced by ion implantation

AU - Markwitz, Andreas

AU - Arps, M.

AU - Baumann, H.

AU - Demortier, Guy

AU - Krimmel, E.F.

AU - Bethge, K.

PY - 1997

Y1 - 1997

M3 - Article

SN - 0029-554X

VL - B124

SP - 506

EP - 514

JO - Nuclear instruments and methods

JF - Nuclear instruments and methods

ER -