Structural defects and epitaxial rotation of C60 and C70(111) films on GeS(001)

D. Bernaerts; S. Amelinckx; G. Van Tendeloo; Kadosa Hevesi; Georg Gensterblum; Li Ming Luo Yu; Jean-Jacques Pireaux; J. Bohr; F. Grey

doi:10.1063/1.363241

Structural defects and epitaxial rotation of C₆₀ and C₇₀(111) films on GeS(001)

D. Bernaerts, S. Amelinckx, G. Van Tendeloo, Kadosa Hevesi, Georg Gensterblum, Li Ming Luo Yu, Jean-Jacques Pireaux, J. Bohr, F. Grey

Namur Research Institute for Life Sciences

Research output: Contribution to journal › Article

Abstract

A transmission electron microscopy study of epitaxial C60 and C70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C60 and C70 crystals, are studied. Small misalignments of the overlayers with respect to the orientation of the substrate, so‐called epitaxial rotations, exist mainly in C70 films, but also sporadically in the C60 overlayers. A simple symmetry model, previously used to predict the rotation of hexagonal overlayers on hexagonal substrates, is numerically tested and applied to the present situation. Some qualitative conclusions concerning the substrate‐film interaction are deduced.

Original language	English
Pages (from-to)	3310-3318
Number of pages	9
Journal	Journal of Applied Physics
Volume	80
Issue number	6
DOIs	https://doi.org/10.1063/1.363241
Publication status	Published - 1996

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@article{11c491d7e8ab42d58f4293da1f774ba7,

title = "Structural defects and epitaxial rotation of C60 and C70(111) films on GeS(001)",

abstract = "A transmission electron microscopy study of epitaxial C60 and C70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C60 and C70 crystals, are studied. Small misalignments of the overlayers with respect to the orientation of the substrate, so‐called epitaxial rotations, exist mainly in C70 films, but also sporadically in the C60 overlayers. A simple symmetry model, previously used to predict the rotation of hexagonal overlayers on hexagonal substrates, is numerically tested and applied to the present situation. Some qualitative conclusions concerning the substrate‐film interaction are deduced.",

author = "D. Bernaerts and S. Amelinckx and {Van Tendeloo}, G. and Kadosa Hevesi and Georg Gensterblum and Yu, {Li Ming Luo} and Jean-Jacques Pireaux and J. Bohr and F. Grey",

year = "1996",

doi = "10.1063/1.363241",

language = "English",

volume = "80",

pages = "3310--3318",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American institute of physics",

number = "6",

}

TY - JOUR

T1 - Structural defects and epitaxial rotation of C60 and C70(111) films on GeS(001)

AU - Bernaerts, D.

AU - Amelinckx, S.

AU - Van Tendeloo, G.

AU - Hevesi, Kadosa

AU - Gensterblum, Georg

AU - Yu, Li Ming Luo

AU - Pireaux, Jean-Jacques

AU - Bohr, J.

AU - Grey, F.

PY - 1996

Y1 - 1996

N2 - A transmission electron microscopy study of epitaxial C60 and C70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C60 and C70 crystals, are studied. Small misalignments of the overlayers with respect to the orientation of the substrate, so‐called epitaxial rotations, exist mainly in C70 films, but also sporadically in the C60 overlayers. A simple symmetry model, previously used to predict the rotation of hexagonal overlayers on hexagonal substrates, is numerically tested and applied to the present situation. Some qualitative conclusions concerning the substrate‐film interaction are deduced.

AB - A transmission electron microscopy study of epitaxial C60 and C70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C60 and C70 crystals, are studied. Small misalignments of the overlayers with respect to the orientation of the substrate, so‐called epitaxial rotations, exist mainly in C70 films, but also sporadically in the C60 overlayers. A simple symmetry model, previously used to predict the rotation of hexagonal overlayers on hexagonal substrates, is numerically tested and applied to the present situation. Some qualitative conclusions concerning the substrate‐film interaction are deduced.

U2 - 10.1063/1.363241

DO - 10.1063/1.363241

M3 - Article

SN - 0021-8979

VL - 80

SP - 3310

EP - 3318

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Structural defects and epitaxial rotation of C60 and C70(111) films on GeS(001)

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Structural defects and epitaxial rotation of C₆₀ and C₇₀(111) films on GeS(001)