Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon : Si-H bending modes

Yves Caudano, Markus Weldon, Yves Chabal, Boris Stefanov, Krishnan Raghavachari, D. Jacobson, Stan Christman, Ed Chaban

Research output: Contribution to journalArticle

Abstract

Infrared absorption spectroscopy is used to study the exfoliation process in hydrogen-implanted silicon wafers by monitoring the bound hydrogen evolution. The ability to probe the low frequency vibrations, such as the bending modes of the Si-H bond, along with first-principles calculations using gradient-corrected density functional theory, makes it possible to unambiguously determine the presence of relevant defect structures such as the hydrogenated mono-vacancies VH, VH2, VH3 and VH4 and the development of internal surfaces. The formation of molecular hydrogen upon annealing is better established by using the evolution of the intensity of both the bending and the stretching modes.
Original languageEnglish
JournalProc. Fourth Int. Symp. On Semiconductor Wafer Bonding : Science, Technology and Applications
Volume97-36
Publication statusPublished - 1998

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