Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon: Si-H bending modes

Yves Caudano; Markus Weldon; Yves Chabal; Boris Stefanov; Krishnan Raghavachari; D. Jacobson; Stan Christman; Ed Chaban

Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon: Si-H bending modes

Yves Caudano, Markus Weldon, Yves Chabal, Boris Stefanov, Krishnan Raghavachari, D. Jacobson, Stan Christman, Ed Chaban

Namur Research Institute for Life Sciences

Research output: Contribution in Book/Catalog/Report/Conference proceeding › Conference contribution

Abstract

Infrared absorption spectroscopy is used to study the exfoliation process in hydrogen-implanted silicon wafers by monitoring the bound hydrogen evolution. The ability to probe the low frequency vibrations, such as the bending modes of the Si-H bond, along with first-principles calculations using gradient-corrected density functional theory, makes it possible to unambiguously determine the presence of relevant defect structures such as the hydrogenated mono-vacancies VH, VH2, VH3 and VH4 and the development of internal surfaces. The formation of molecular hydrogen upon annealing is better established by using the evolution of the intensity of both the bending and the stretching modes.

Original language	English
Title of host publication	Proceedings of the fourth international symposium on Semiconductor Wafer Bonding
Subtitle of host publication	Science, Technology, and Applications
Editors	Ulrich Gösele, Helmut Baugmart, Takano Abe, Charles Hunt, S. Iyer
Place of Publication	Pennington
Publisher	Electrochemical Society, Inc.
Pages	365-372
ISBN (Print)	1-56677-189-7
Publication status	Published - 1998

Publication series

Name	Proceedings
Publisher	Electrochemical Cosiety
Number	36
Volume	97

Cite this

Caudano, Y., Weldon, M., Chabal, Y., Stefanov, B., Raghavachari, K., Jacobson, D., Christman, S., & Chaban, E. (1998). Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon: Si-H bending modes. In U. Gösele, H. Baugmart, T. Abe, C. Hunt, & S. Iyer (Eds.), Proceedings of the fourth international symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications (pp. 365-372). (Proceedings; Vol. 97, No. 36). Electrochemical Society, Inc..

Caudano, Yves ; Weldon, Markus ; Chabal, Yves et al. / Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon : Si-H bending modes. Proceedings of the fourth international symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. editor / Ulrich Gösele ; Helmut Baugmart ; Takano Abe ; Charles Hunt ; S. Iyer. Pennington : Electrochemical Society, Inc., 1998. pp. 365-372 (Proceedings; 36).

@inproceedings{2f33146ee180454fa848b14fdb6d4558,

title = "Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon: Si-H bending modes",

abstract = "Infrared absorption spectroscopy is used to study the exfoliation process in hydrogen-implanted silicon wafers by monitoring the bound hydrogen evolution. The ability to probe the low frequency vibrations, such as the bending modes of the Si-H bond, along with first-principles calculations using gradient-corrected density functional theory, makes it possible to unambiguously determine the presence of relevant defect structures such as the hydrogenated mono-vacancies VH, VH2, VH3 and VH4 and the development of internal surfaces. The formation of molecular hydrogen upon annealing is better established by using the evolution of the intensity of both the bending and the stretching modes.",

author = "Yves Caudano and Markus Weldon and Yves Chabal and Boris Stefanov and Krishnan Raghavachari and D. Jacobson and Stan Christman and Ed Chaban",

year = "1998",

language = "English",

isbn = "1-56677-189-7",

series = "Proceedings",

publisher = "Electrochemical Society, Inc.",

number = "36",

pages = "365--372",

editor = "Ulrich G{\"o}sele and Helmut Baugmart and Takano Abe and Charles Hunt and S. Iyer",

booktitle = "Proceedings of the fourth international symposium on Semiconductor Wafer Bonding",

address = "United States",

}

Caudano, Y, Weldon, M, Chabal, Y, Stefanov, B, Raghavachari, K, Jacobson, D, Christman, S & Chaban, E 1998, Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon: Si-H bending modes. in U Gösele, H Baugmart, T Abe, C Hunt & S Iyer (eds), Proceedings of the fourth international symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. Proceedings, no. 36, vol. 97, Electrochemical Society, Inc., Pennington, pp. 365-372.

Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon: Si-H bending modes. / Caudano, Yves; Weldon, Markus; Chabal, Yves et al.
Proceedings of the fourth international symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. ed. / Ulrich Gösele; Helmut Baugmart; Takano Abe; Charles Hunt; S. Iyer. Pennington: Electrochemical Society, Inc., 1998. p. 365-372 (Proceedings; Vol. 97, No. 36).

Research output: Contribution in Book/Catalog/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon

T2 - Si-H bending modes

AU - Caudano, Yves

AU - Weldon, Markus

AU - Chabal, Yves

AU - Stefanov, Boris

AU - Raghavachari, Krishnan

AU - Jacobson, D.

AU - Christman, Stan

AU - Chaban, Ed

PY - 1998

Y1 - 1998

N2 - Infrared absorption spectroscopy is used to study the exfoliation process in hydrogen-implanted silicon wafers by monitoring the bound hydrogen evolution. The ability to probe the low frequency vibrations, such as the bending modes of the Si-H bond, along with first-principles calculations using gradient-corrected density functional theory, makes it possible to unambiguously determine the presence of relevant defect structures such as the hydrogenated mono-vacancies VH, VH2, VH3 and VH4 and the development of internal surfaces. The formation of molecular hydrogen upon annealing is better established by using the evolution of the intensity of both the bending and the stretching modes.

AB - Infrared absorption spectroscopy is used to study the exfoliation process in hydrogen-implanted silicon wafers by monitoring the bound hydrogen evolution. The ability to probe the low frequency vibrations, such as the bending modes of the Si-H bond, along with first-principles calculations using gradient-corrected density functional theory, makes it possible to unambiguously determine the presence of relevant defect structures such as the hydrogenated mono-vacancies VH, VH2, VH3 and VH4 and the development of internal surfaces. The formation of molecular hydrogen upon annealing is better established by using the evolution of the intensity of both the bending and the stretching modes.

M3 - Conference contribution

SN - 1-56677-189-7

T3 - Proceedings

SP - 365

EP - 372

BT - Proceedings of the fourth international symposium on Semiconductor Wafer Bonding

A2 - Gösele, Ulrich

A2 - Baugmart, Helmut

A2 - Abe, Takano

A2 - Hunt, Charles

A2 - Iyer, S.

PB - Electrochemical Society, Inc.

CY - Pennington

ER -

Caudano Y, Weldon M, Chabal Y, Stefanov B, Raghavachari K, Jacobson D et al. Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon: Si-H bending modes. In Gösele U, Baugmart H, Abe T, Hunt C, Iyer S, editors, Proceedings of the fourth international symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. Pennington: Electrochemical Society, Inc. 1998. p. 365-372. (Proceedings; 36).

Spectroscopic and theoretical investigations of hydrogen-induced exfoliation of silicon: Si-H bending modes

Abstract

Publication series

Fingerprint

Cite this