Abstract
Doping of Ge with Sn atoms by ion implantation and annealing by solid phase epitaxial re-growth process was investigated as a possible way to create Ge1-xSnx layers. Ion implantation was carried out at liquid nitrogen to avoid nano-void formation and three implant doses were tested: 5×1015, 1×1015 and 5×10 14 at/cm2, respectively. Implant energy was set to 45 keV and implants were carried out through an 11 nm SiNxOy film to prevent Sn out-diffusion upon annealing. This was only partially effective. Samples were then annealed in inert atmosphere either at 350°C varying anneal time or for 100 s varying temperature from 300 to 500°C. SPER was effective to anneal damage without Sn diffusion at 350° for samples implanted at medium and low fluences whereas the 5×1015 at/cm2 samples remained with a ∼15 nm amorphous layer even when applying the highest thermal budget.
Original language | English |
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Title of host publication | Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology |
Pages | 103-106 |
Number of pages | 4 |
Volume | 1496 |
DOIs | |
Publication status | Published - 2012 |
Externally published | Yes |
Event | 19th International Conference on Ion Implantation Technology 2012, IIT 2012 - Valladolid, Spain Duration: 25 Jun 2012 → 29 Jun 2012 |
Conference
Conference | 19th International Conference on Ion Implantation Technology 2012, IIT 2012 |
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Country/Territory | Spain |
City | Valladolid |
Period | 25/06/12 → 29/06/12 |
Keywords
- GeSn
- germanium
- SPER
- Tin