Doping of Ge with Sn atoms by ion implantation and annealing by solid phase epitaxial re-growth process was investigated as a possible way to create Ge1-xSnx layers. Ion implantation was carried out at liquid nitrogen to avoid nano-void formation and three implant doses were tested: 5×1015, 1×1015 and 5×10 14 at/cm2, respectively. Implant energy was set to 45 keV and implants were carried out through an 11 nm SiNxOy film to prevent Sn out-diffusion upon annealing. This was only partially effective. Samples were then annealed in inert atmosphere either at 350°C varying anneal time or for 100 s varying temperature from 300 to 500°C. SPER was effective to anneal damage without Sn diffusion at 350° for samples implanted at medium and low fluences whereas the 5×1015 at/cm2 samples remained with a ∼15 nm amorphous layer even when applying the highest thermal budget.
|Title of host publication||Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology|
|Number of pages||4|
|Publication status||Published - 2012|
|Event||19th International Conference on Ion Implantation Technology 2012, IIT 2012 - Valladolid, Spain|
Duration: 25 Jun 2012 → 29 Jun 2012
|Conference||19th International Conference on Ion Implantation Technology 2012, IIT 2012|
|Period||25/06/12 → 29/06/12|