Solid phase epitaxial re-growth of Sn ion implanted germanium thin films

D. Giubertoni, E. Demenev, S. Gupta, Y. Jestin, F. Meirer, S. Gennaro, E. Iacob, G. Pepponi, G. Pucker, R. M. Gwilliam, Chris Jeynes, J. L. Colaux, K. C. Saraswat, M. Bersani

Research output: Contribution in Book/Catalog/Report/Conference proceedingConference contribution

Abstract

Doping of Ge with Sn atoms by ion implantation and annealing by solid phase epitaxial re-growth process was investigated as a possible way to create Ge1-xSnx layers. Ion implantation was carried out at liquid nitrogen to avoid nano-void formation and three implant doses were tested: 5×1015, 1×1015 and 5×10 14 at/cm2, respectively. Implant energy was set to 45 keV and implants were carried out through an 11 nm SiNxOy film to prevent Sn out-diffusion upon annealing. This was only partially effective. Samples were then annealed in inert atmosphere either at 350°C varying anneal time or for 100 s varying temperature from 300 to 500°C. SPER was effective to anneal damage without Sn diffusion at 350° for samples implanted at medium and low fluences whereas the 5×1015 at/cm2 samples remained with a ∼15 nm amorphous layer even when applying the highest thermal budget.

Original languageEnglish
Title of host publicationIon Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology
Pages103-106
Number of pages4
Volume1496
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event19th International Conference on Ion Implantation Technology 2012, IIT 2012 - Valladolid, Spain
Duration: 25 Jun 201229 Jun 2012

Conference

Conference19th International Conference on Ion Implantation Technology 2012, IIT 2012
CountrySpain
CityValladolid
Period25/06/1229/06/12

Keywords

  • GeSn
  • germanium
  • SPER
  • Tin

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