TY - JOUR
T1 - Selective-area epitaxy of CdTe on CdTe/ZnTe/Si(211) through a nanopatterned silicon nitride mask
AU - Fahey, S.
AU - Bommena, R.
AU - Kodama, R.
AU - Sporken, R.
AU - Sivananthan, S.
PY - 2012/10
Y1 - 2012/10
N2 - We report here the use of molecular beam epitaxy (MBE) to achieve selectivearea epitaxy (SAE) and coalescence of CdTe on nanopatterned substrates with 0.5-μm-pitch arrays of CdTe/ZnTe/Si(211) seeding areas, exposed through a silicon nitride mask. The nanopatterned substrate surface morphology, crystallinity, and chemical composition were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), and x-ray photoelectron spectroscopy (XPS) both before and after exposure to CdTe flux by MBE. We find a seven times wider (422) CdTe XRD rocking curve full-width at half-maximum (FWHM) for our patterned samples, when directly compared with unpatterned samples with identical growth and pregrowth conditions. We also observe that electron beam-induced carbon deposits can serve as a mask material for SAE of CdTe by MBE. Finally, we point to possible further improvements in patterned sample architectures of the future, for use in CdTe films on Si.
AB - We report here the use of molecular beam epitaxy (MBE) to achieve selectivearea epitaxy (SAE) and coalescence of CdTe on nanopatterned substrates with 0.5-μm-pitch arrays of CdTe/ZnTe/Si(211) seeding areas, exposed through a silicon nitride mask. The nanopatterned substrate surface morphology, crystallinity, and chemical composition were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), and x-ray photoelectron spectroscopy (XPS) both before and after exposure to CdTe flux by MBE. We find a seven times wider (422) CdTe XRD rocking curve full-width at half-maximum (FWHM) for our patterned samples, when directly compared with unpatterned samples with identical growth and pregrowth conditions. We also observe that electron beam-induced carbon deposits can serve as a mask material for SAE of CdTe by MBE. Finally, we point to possible further improvements in patterned sample architectures of the future, for use in CdTe films on Si.
KW - Cadmium telluride
KW - Coalescence
KW - Molecular beam epitaxy
KW - Nanopattern
KW - Selective-area epitaxy
KW - Silicon nitride
UR - http://www.scopus.com/inward/record.url?scp=84868567853&partnerID=8YFLogxK
U2 - 10.1007/s11664-012-2056-z
DO - 10.1007/s11664-012-2056-z
M3 - Article
AN - SCOPUS:84868567853
SN - 0361-5235
VL - 41
SP - 2899
EP - 2907
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 10
ER -