TY - JOUR
T1 - Sealing of porous low-k dielectrics
T2 - an ellipsometric porosimetry study of UV-O3 oxidized SiOxCy films
AU - Whelan, Caroline
AU - Le, Quoc
AU - Cecchet, Francesca
AU - Satta, Alessandra
AU - Pireaux, Jean-Jacques
AU - Rudolf, Petra
AU - Maex, Karen
PY - 2003/12/3
Y1 - 2003/12/3
N2 - The ongoing evolution from to insulator materials with lower dielectric constant, k, through the introduction of pores, brings new challenges in terms of processing and reliability. Porosity enhances penetration of undesired chemical species. A method of sealing microporous low-k dielectric chemical vapor deposited silicon oxycarbide films using UV-ozone induced oxidation has been investigated. The film thickness, refractive index, porosity, pore size, and sealing as a function of exposure time have been characterized by ellipsometry. The films are sealed without modification of the underlying porosity, an essential first step in integrating porous materials. © 2003 The Electrochemical Society. All rights reserved.
AB - The ongoing evolution from to insulator materials with lower dielectric constant, k, through the introduction of pores, brings new challenges in terms of processing and reliability. Porosity enhances penetration of undesired chemical species. A method of sealing microporous low-k dielectric chemical vapor deposited silicon oxycarbide films using UV-ozone induced oxidation has been investigated. The film thickness, refractive index, porosity, pore size, and sealing as a function of exposure time have been characterized by ellipsometry. The films are sealed without modification of the underlying porosity, an essential first step in integrating porous materials. © 2003 The Electrochemical Society. All rights reserved.
U2 - https://doi.org/10.1149/1.1633512
DO - https://doi.org/10.1149/1.1633512
M3 - Article
VL - 7
SP - F8-F10
JO - Electrochemical and Solid State Letters
JF - Electrochemical and Solid State Letters
IS - 2
ER -