Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

N. Reckinger; X. Tang; V. Bayot; D.A. Yarekha; E. Dubois; S. Godey; X. Wallart; G. Larrieu; A. Łaszcz; J. Ratajczak; P.J. Jacques; J.-P. Raskin

doi:10.1063/1.3136849

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

N. Reckinger, X. Tang, V. Bayot, D.A. Yarekha, E. Dubois, S. Godey, X. Wallart, G. Larrieu, A. Łaszcz, J. Ratajczak, P.J. Jacques, J.-P. Raskin

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Abstract

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 °C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.

Original language	English
Journal	Applied Physics Letters
Volume	94
Issue number	19
DOIs	https://doi.org/10.1063/1.3136849
Publication status	Published - 1 Jan 2009

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10.1063/1.3136849

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title = "Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing",

abstract = "The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 °C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.",

author = "N. Reckinger and X. Tang and V. Bayot and D.A. Yarekha and E. Dubois and S. Godey and X. Wallart and G. Larrieu and A. {\L}aszcz and J. Ratajczak and P.J. Jacques and J.-P. Raskin",

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doi = "10.1063/1.3136849",

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T1 - Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

AU - Reckinger, N.

AU - Tang, X.

AU - Bayot, V.

AU - Yarekha, D.A.

AU - Dubois, E.

AU - Godey, S.

AU - Wallart, X.

AU - Larrieu, G.

AU - Łaszcz, A.

AU - Ratajczak, J.

AU - Jacques, P.J.

AU - Raskin, J.-P.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 °C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.

AB - The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 °C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.

UR - http://www.scopus.com/inward/record.url?scp=67049100760&partnerID=8YFLogxK

U2 - 10.1063/1.3136849

DO - 10.1063/1.3136849

M3 - Article

AN - SCOPUS:67049100760

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

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