Restoring self-limited growth of single-layer graphene on copper foil via backside coating

Nicolas Reckinger, Marcello Casa, Jeroen E. Scheerder, Wout Keijers, Matthieu Paillet, Jean-Roch Huntzinger, Emile Haye, Alexandre Felten, Joris Van de Vondel, Maria Sarno, Luc Henrard, Jean-Francois Colomer

Research output: Contribution to journalArticle

10 Downloads (Pure)

Abstract

The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that prevents the growth of few-layer graphene (FLG). However, the reproducibility of the CVD growth of homogeneous SLG remains a major challenge, especially if one wants to avoid heavy surface treatments, monocrystalline substrates and expensive equipment to control the atmosphere inside the growth system. We demonstrate here that backside tungsten coating of copper foil allows the exclusive growth of SLG with full coverage by atmospheric pressure CVD implemented in a vacuum-free outfit. We show that the absence of FLG patches is related to the absence of decomposition of methane on the backside and consequently to the suppression of C diffusion through copper. In the perspective of large-scale production of graphene, this approach constitutes a significant improvement to the traditional CVD growth process since (1) a tight control of the hydrocarbon flow is no longer required to avoid FLG formation and, consequently, (2) the growth duration necessary to reach full coverage can be dramatically shortened.
Original languageUndefined/Unknown
Number of pages40
JournalArXiv pre-print
Publication statusPublished - 15 Aug 2018

Keywords

  • cond-mat.mtrl-sci

Cite this

@article{4a436c7e6bce4b9db1cbd5abbd101388,
title = "Restoring self-limited growth of single-layer graphene on copper foil via backside coating",
abstract = "The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that prevents the growth of few-layer graphene (FLG). However, the reproducibility of the CVD growth of homogeneous SLG remains a major challenge, especially if one wants to avoid heavy surface treatments, monocrystalline substrates and expensive equipment to control the atmosphere inside the growth system. We demonstrate here that backside tungsten coating of copper foil allows the exclusive growth of SLG with full coverage by atmospheric pressure CVD implemented in a vacuum-free outfit. We show that the absence of FLG patches is related to the absence of decomposition of methane on the backside and consequently to the suppression of C diffusion through copper. In the perspective of large-scale production of graphene, this approach constitutes a significant improvement to the traditional CVD growth process since (1) a tight control of the hydrocarbon flow is no longer required to avoid FLG formation and, consequently, (2) the growth duration necessary to reach full coverage can be dramatically shortened.",
keywords = "cond-mat.mtrl-sci, Graphene, chemical vapor deposition,, copper, uniformity, Reproducibility, raman spectroscopy",
author = "Nicolas Reckinger and Marcello Casa and Scheerder, {Jeroen E.} and Wout Keijers and Matthieu Paillet and Jean-Roch Huntzinger and Emile Haye and Alexandre Felten and Vondel, {Joris Van de} and Maria Sarno and Luc Henrard and Jean-Francois Colomer",
note = "40 pages: 14 pages for the main article (4 figures), 26 pages for the supplementary information (17 figures)",
year = "2018",
month = "8",
day = "15",
language = "Ind{\'e}fini/inconnu",
journal = "ArXiv pre-print",

}

Restoring self-limited growth of single-layer graphene on copper foil via backside coating. / Reckinger, Nicolas; Casa, Marcello; Scheerder, Jeroen E.; Keijers, Wout; Paillet, Matthieu; Huntzinger, Jean-Roch; Haye, Emile; Felten, Alexandre; Vondel, Joris Van de; Sarno, Maria; Henrard, Luc; Colomer, Jean-Francois.

In: ArXiv pre-print, 15.08.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Restoring self-limited growth of single-layer graphene on copper foil via backside coating

AU - Reckinger, Nicolas

AU - Casa, Marcello

AU - Scheerder, Jeroen E.

AU - Keijers, Wout

AU - Paillet, Matthieu

AU - Huntzinger, Jean-Roch

AU - Haye, Emile

AU - Felten, Alexandre

AU - Vondel, Joris Van de

AU - Sarno, Maria

AU - Henrard, Luc

AU - Colomer, Jean-Francois

N1 - 40 pages: 14 pages for the main article (4 figures), 26 pages for the supplementary information (17 figures)

PY - 2018/8/15

Y1 - 2018/8/15

N2 - The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that prevents the growth of few-layer graphene (FLG). However, the reproducibility of the CVD growth of homogeneous SLG remains a major challenge, especially if one wants to avoid heavy surface treatments, monocrystalline substrates and expensive equipment to control the atmosphere inside the growth system. We demonstrate here that backside tungsten coating of copper foil allows the exclusive growth of SLG with full coverage by atmospheric pressure CVD implemented in a vacuum-free outfit. We show that the absence of FLG patches is related to the absence of decomposition of methane on the backside and consequently to the suppression of C diffusion through copper. In the perspective of large-scale production of graphene, this approach constitutes a significant improvement to the traditional CVD growth process since (1) a tight control of the hydrocarbon flow is no longer required to avoid FLG formation and, consequently, (2) the growth duration necessary to reach full coverage can be dramatically shortened.

AB - The growth of single-layer graphene (SLG) by chemical vapor deposition (CVD) on copper surfaces is very popular because of the self-limiting effect that prevents the growth of few-layer graphene (FLG). However, the reproducibility of the CVD growth of homogeneous SLG remains a major challenge, especially if one wants to avoid heavy surface treatments, monocrystalline substrates and expensive equipment to control the atmosphere inside the growth system. We demonstrate here that backside tungsten coating of copper foil allows the exclusive growth of SLG with full coverage by atmospheric pressure CVD implemented in a vacuum-free outfit. We show that the absence of FLG patches is related to the absence of decomposition of methane on the backside and consequently to the suppression of C diffusion through copper. In the perspective of large-scale production of graphene, this approach constitutes a significant improvement to the traditional CVD growth process since (1) a tight control of the hydrocarbon flow is no longer required to avoid FLG formation and, consequently, (2) the growth duration necessary to reach full coverage can be dramatically shortened.

KW - cond-mat.mtrl-sci

KW - Graphene

KW - chemical vapor deposition,

KW - copper

KW - uniformity

KW - Reproducibility

KW - raman spectroscopy

M3 - Article

JO - ArXiv pre-print

JF - ArXiv pre-print

ER -