Ti/GaN interface formation on GaN(0 0 0 1)-(1 × 1) surface has been investigated by means of resonant photoelectron spectroscopy (for photon energies near to Ti 3p → 3d excitation). The sets of photoelectron energy distribution curves were recorded for in situ prepared clean GaN surface and as a function of Ti coverage followed by post-deposition annealing. Manifestations of chemical reactions at the Ti/GaN interface were revealed in the valence band spectra as well as in the Ga 3d core level peak-the discerned contribution of Ti 3d states to the valence band turned out to be similar to that reported in the literature for titanium nitride. The interaction between Ti and N was further enhanced by post-deposition annealing. The study was complemented with SIMS and AFM measurements.
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Technological Platform Synthesis, Irradiation and Analysis of Materials
Facility/equipment: Technological Platform