Resistive switching based on filaments in metal/PMMA/metal thin film devices

Christoph Wolf; Sebastian Nau; Stefan Sax; Yan Busby; Jean-Jacques Pireaux; Emil J W List-Kratochvil

doi:10.7567/JJAP.54.120301

Resistive switching based on filaments in metal/PMMA/metal thin film devices

Christoph Wolf, Sebastian Nau, Stefan Sax, Yan Busby, Jean-Jacques Pireaux, Emil J W List-Kratochvil

Research output: Contribution to journal › Article › peer-review

Abstract

The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/ metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.

Original language	English
Article number	120301
Journal	Japanese Journal of Applied Physics
Volume	54
Issue number	12
DOIs	https://doi.org/10.7567/JJAP.54.120301
Publication status	Published - 1 Dec 2015

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10.7567/JJAP.54.120301

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title = "Resistive switching based on filaments in metal/PMMA/metal thin film devices",

abstract = "The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/ metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.",

author = "Christoph Wolf and Sebastian Nau and Stefan Sax and Yan Busby and Jean-Jacques Pireaux and List-Kratochvil, {Emil J W}",

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AU - Wolf, Christoph

AU - Nau, Sebastian

AU - Sax, Stefan

AU - Busby, Yan

AU - Pireaux, Jean-Jacques

AU - List-Kratochvil, Emil J W

PY - 2015/12/1

Y1 - 2015/12/1

N2 - The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/ metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.

AB - The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/ metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.

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VL - 54

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12

M1 - 120301

ER -

Resistive switching based on filaments in metal/PMMA/metal thin film devices

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Synthesis, Irradiation and Analysis of Materials (SIAM)

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Resistive switching based on filaments in metal/PMMA/metal thin film devices

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