RBS and XPS depth-profiling of Ge-nc synthesized from Ge+ implantation in thin SiO2/Si layers.

Julien Demarche, Pierre Louette, D. Barba, Guy G. Ross, Guy Terwagne

Research output: Contribution to conference › Poster › peer-review

Original language	English
Publication status	In preparation - 2013
Event	IBA 2013 - Ion Beam Analysis - Seattle - US - Seattle, United States Duration: 23 Jul 2012 → 28 Jul 2013

Conference	IBA 2013 - Ion Beam Analysis - Seattle - US
Country/Territory	United States
City	Seattle
Period	23/07/12 → 28/07/13

Cite this

@conference{f272beddc1f947db928372d69bc0343d,

title = "RBS and XPS depth-profiling of Ge-nc synthesized from Ge+ implantation in thin SiO2/Si layers.",

author = "Julien Demarche and Pierre Louette and D. Barba and Ross, {Guy G.} and Guy Terwagne",

year = "2013",

language = "English",

note = "IBA 2013 - Ion Beam Analysis - Seattle - US ; Conference date: 23-07-2012 Through 28-07-2013",

}