TY - JOUR
T1 - Raman active phonons of identified semiconducting single-walled carbon nanotubes
AU - M. Paillet, [No Value]
AU - T. Michel, [No Value]
AU - J.C. Meyer, [No Value]
AU - Popov, Valentin
AU - Henrard, Luc
PY - 2006
Y1 - 2006
N2 - The resonant Raman spectra of (n,m) semiconducting single-walled carbon nanotubes, unambiguously identified from their electron diffraction patterns, have been measured. The diameter dependence of the frequency of the tangential modes with A symmetry has been obtained in the diameter range from 1.4 to 2.5 nm. The comparison between the excitation energies and the calculated transition energies allowed us to determine precisely the values of the Es33 and Es44 transition energies. Finally, in the debate concerning the dominant process at the origin of the first-order Raman scattering in single-walled carbon nanotubes (single resonance process or double resonance process), our results are well understood in the framework of a single resonance process.
AB - The resonant Raman spectra of (n,m) semiconducting single-walled carbon nanotubes, unambiguously identified from their electron diffraction patterns, have been measured. The diameter dependence of the frequency of the tangential modes with A symmetry has been obtained in the diameter range from 1.4 to 2.5 nm. The comparison between the excitation energies and the calculated transition energies allowed us to determine precisely the values of the Es33 and Es44 transition energies. Finally, in the debate concerning the dominant process at the origin of the first-order Raman scattering in single-walled carbon nanotubes (single resonance process or double resonance process), our results are well understood in the framework of a single resonance process.
U2 - 10.1103/PhysRevLett.96.257401
DO - 10.1103/PhysRevLett.96.257401
M3 - Article
SN - 0031-9007
VL - 96
JO - Physical review letters
JF - Physical review letters
IS - 25
ER -