Promotion of the Si(100)-O2 reaction by Sm

Jens Onsgaard, Jacques Ghijsen, Robert L. Johnson, M Christiansen, F Ørskov, P Godowski

Research output: Contribution to journalArticlepeer-review

Abstract

It is demonstrated that ultrathin and thin films of Sm on Si (100) strongly promote the oxidation of Si. Photoemission measurements of the Si 2p core electrons show binding-energy shifts characteristic of Si2O3 and SiO2. The oxygen binding is conditioned by the presence of Sm, which is also oxidized. Reflection electron-energy-loss spectra and valence-band photoemission data indicate formation of an insulator with a valence-band maximum 4 eV below the Fermi level. The influences of samarium coverages, in the 1–20-monolayer regime, and of the temperature on the reaction are studied.
Original languageEnglish
Pages (from-to)4216-4223
JournalPhysical review. B, Condensed matter
Volume43
Issue number5
DOIs
Publication statusPublished - 1991
Externally publishedYes

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