Preparation of single phase 2H-MoTe2 films by molecular beam epitaxy

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Abstract

The controlled growth of mono-/double-layer 2H-MoTe2 fully covering the substrate is highly desirable for the future of device fabrication but still remains a challenge. In this study, we present growth of mono-/double-layer 2H-MoTe2 films on graphene terminated 6H-SiC(0 0 0 1) substrates by molecular beam epitaxy (MBE). We develop two distinct processes which achieve better layer-by-layer controllability of stoichiometric films. We further provide a coherent explanation for the Moiré patterns together with the formation of semi-coherent twin boundaries (TBs) in the films and the electronic structure of the films. Our materials are analyzed in detail by reflection high energy electron diffraction (RHEED), X-ray photoemission spectroscopy (XPS), and scanning tunneling microscopy/spectroscopy (STM/STS).

Original languageEnglish
Article number146428
JournalApplied Surface Science
Volume523
DOIs
Publication statusPublished - 1 Sep 2020

Keywords

  • Graphene
  • Molecular beam epitaxy
  • MoTe
  • Reflection high energy electron diffraction
  • Transition metal dichalcogenides (TMDs)
  • Twin boundary

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