Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

H. Bender, Th. Conard, O. Richard, B. Brijs, J. Pétry, W. Vandervorst, Chr. Defranoux, P. Boher, N. Rochat, C. Wyon, P. Mack, J. Wolstenholme, R. Vitchev, L. Houssiau, J.-J. Pireaux, A. Bergmaier, G. Dollinger

Research output: Contribution to journalArticlepeer-review


The physical properties of HfO2 layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.

Original languageEnglish
Pages (from-to)223-232
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1 Jan 2003

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