Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

H. Bender; Th. Conard; O. Richard; B. Brijs; J. Pétry; W. Vandervorst; Chr. Defranoux; P. Boher; N. Rochat; C. Wyon; P. Mack; J. Wolstenholme; R. Vitchev; L. Houssiau; J.-J. Pireaux; A. Bergmaier; G. Dollinger

Physical characterization of thin HfO₂ layers by the combined analysis with complementary techniques

H. Bender, Th. Conard, O. Richard, B. Brijs, J. Pétry, W. Vandervorst, Chr. Defranoux, P. Boher, N. Rochat, C. Wyon, P. Mack, J. Wolstenholme, R. Vitchev, L. Houssiau, J.-J. Pireaux, A. Bergmaier, G. Dollinger

Namur Research Institute for Life Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

The physical properties of HfO₂ layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.

Original language	English
Pages (from-to)	223-232
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5133
Publication status	Published - 1 Jan 2003

Cite this

Bender, H., Conard, T., Richard, O., Brijs, B., Pétry, J., Vandervorst, W., Defranoux, C., Boher, P., Rochat, N., Wyon, C., Mack, P., Wolstenholme, J., Vitchev, R., Houssiau, L., Pireaux, J.-J., Bergmaier, A., & Dollinger, G. (2003). Physical characterization of thin HfO₂ layers by the combined analysis with complementary techniques. Proceedings of SPIE - The International Society for Optical Engineering, 5133, 223-232.

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abstract = "The physical properties of HfO2 layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.",

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Bender, H, Conard, T, Richard, O, Brijs, B, Pétry, J, Vandervorst, W, Defranoux, C, Boher, P, Rochat, N, Wyon, C, Mack, P, Wolstenholme, J, Vitchev, R, Houssiau, L , Pireaux, J-J, Bergmaier, A & Dollinger, G 2003, 'Physical characterization of thin HfO₂ layers by the combined analysis with complementary techniques', Proceedings of SPIE - The International Society for Optical Engineering, vol. 5133, pp. 223-232.

TY - JOUR

T1 - Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

AU - Bender, H.

AU - Conard, Th.

AU - Richard, O.

AU - Brijs, B.

AU - Pétry, J.

AU - Vandervorst, W.

AU - Defranoux, Chr.

AU - Boher, P.

AU - Rochat, N.

AU - Wyon, C.

AU - Mack, P.

AU - Wolstenholme, J.

AU - Vitchev, R.

AU - Houssiau, L.

AU - Pireaux, J.-J.

AU - Bergmaier, A.

AU - Dollinger, G.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The physical properties of HfO2 layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.

AB - The physical properties of HfO2 layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.

UR - http://www.scopus.com/inward/record.url?scp=0242468973&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0242468973

SN - 0277-786X

VL - 5133

SP - 223

EP - 232

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Physical characterization of thin HfO₂ layers by the combined analysis with complementary techniques

Abstract

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