The physical properties of HfO2 layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.
|Number of pages||10|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|Publication status||Published - 1 Jan 2003|