Abstract
Phase transitions occurring at the Mn/ZnO interface upon annealing are probed in situ by high-energy X-ray: photoelectron and absorption spectroscopies. A thin Mn film (∼1 nm) is grown on the (0001̄) surface of a ZnO single crystal. Upon annealing to progressively higher temperature ranging from 575 to 800 K, various Mn phases form successively. At first, the Mn film oxidizes and a MnO layer forms on top of the surface. Then, while Mn atoms diffuse deeper into the bulk of ZnO, Zn yMn 3-yO 4 starts to form. Finally, at the highest annealing temperature, Mn appears to be substitutionally diluted at Zn sites within the ZnO lattice.
Original language | English |
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Pages (from-to) | 665-670 |
Number of pages | 6 |
Journal | Journal of Physical Chemistry C: Nanomaterials and interfaces |
Volume | 116 |
Issue number | 1 |
DOIs | |
Publication status | Published - 12 Jan 2012 |
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Dive into the research topics of 'Phase Transitions at the Mn/ZnO(000-1) Interface Probed by High Energy X ray Spectroscopies'. Together they form a unique fingerprint.Equipment
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Scanning Tunneling Microscopy
Sporken, R. (Manager)
Technological Platform Morphology - ImagingFacility/equipment: Equipment
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Synthesis, Irradiation and Analysis of Materials (SIAM)
Louette, P. (Manager), Colaux, J. (Manager), Felten, A. (Manager), Tabarrant, T. (Operator), COME, F. (Operator) & Debarsy, P.-L. (Manager)
Technological Platform Synthesis, Irradiation and Analysis of MaterialsFacility/equipment: Technological Platform