Phase transitions occurring at the Mn/ZnO interface upon annealing are probed in situ by high-energy X-ray: photoelectron and absorption spectroscopies. A thin Mn film (∼1 nm) is grown on the (0001̄) surface of a ZnO single crystal. Upon annealing to progressively higher temperature ranging from 575 to 800 K, various Mn phases form successively. At first, the Mn film oxidizes and a MnO layer forms on top of the surface. Then, while Mn atoms diffuse deeper into the bulk of ZnO, Zn yMn 3-yO 4 starts to form. Finally, at the highest annealing temperature, Mn appears to be substitutionally diluted at Zn sites within the ZnO lattice.
|Number of pages||6|
|Journal||Journal of physical chemistry. C|
|Publication status||Published - 12 Jan 2012|
FingerprintDive into the research topics of 'Phase Transitions at the Mn/ZnO(000-1) Interface Probed by High Energy X ray Spectroscopies'. Together they form a unique fingerprint.
STM (scanning tunneling microscope)
Charles Nicaise (Manager) & Francesca Cecchet (Manager)Technological Platform Morphology - Imaging
Synthesis, Irradiation and Analysis of Materials (SIAM)
Pierre Louette (Manager), Julien Colaux (Manager), Alexandre Felten (Manager) & Jorge Humberto Mejia Mendoza (Manager)Technological Platform Synthesis, Irradiation and Analysis of Materials
Facility/equipment: Technological Platform