Phase transitions occurring at the Mn/ZnO interface upon annealing are probed in situ by high-energy X-ray: photoelectron and absorption spectroscopies. A thin Mn film (∼1 nm) is grown on the (0001̄) surface of a ZnO single crystal. Upon annealing to progressively higher temperature ranging from 575 to 800 K, various Mn phases form successively. At first, the Mn film oxidizes and a MnO layer forms on top of the surface. Then, while Mn atoms diffuse deeper into the bulk of ZnO, Zn yMn 3-yO 4 starts to form. Finally, at the highest annealing temperature, Mn appears to be substitutionally diluted at Zn sites within the ZnO lattice.
Technological Platform Synthesis, Irradiation and Analysis of Materials
Facility/equipment: Technological Platform