Oxygen Partial Pressure and Annealing Temperature Effects on the formation of Sputtered WO3 Films

Carla Bittencourt Papaleo Montes, R. Landers, E. Llobet, X. Correig, J. Calderer

Research output: Contribution to journalArticle

Original languageEnglish
JournalSemiconductor Science and Technology
Volume7
Publication statusPublished - 2002

Cite this

@article{5198a0d841454cf481455582f645b95f,
title = "Oxygen Partial Pressure and Annealing Temperature Effects on the formation of Sputtered WO3 Films",
author = "{Bittencourt Papaleo Montes}, Carla and R. Landers and E. Llobet and X. Correig and J. Calderer",
year = "2002",
language = "English",
volume = "7",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",

}

Oxygen Partial Pressure and Annealing Temperature Effects on the formation of Sputtered WO3 Films. / Bittencourt Papaleo Montes, Carla; Landers, R.; Llobet, E.; Correig, X.; Calderer, J.

In: Semiconductor Science and Technology , Vol. 7, 2002.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Oxygen Partial Pressure and Annealing Temperature Effects on the formation of Sputtered WO3 Films

AU - Bittencourt Papaleo Montes, Carla

AU - Landers, R.

AU - Llobet, E.

AU - Correig, X.

AU - Calderer, J.

PY - 2002

Y1 - 2002

M3 - Article

VL - 7

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

ER -